Mostrar el registro sencillo del ítem
dc.contributor.author
Shekhter, P.
dc.contributor.author
Palumbo, Félix Roberto Mario
![Se ha confirmado la validez de este valor de autoridad por un usuario](/themes/CONICETDigital/images/authority_control/invisible.gif)
dc.contributor.author
Cohen Weinfeld, K.
dc.contributor.author
Eizenberg, M.
dc.date.available
2018-02-07T17:12:50Z
dc.date.issued
2014-08
dc.identifier.citation
Shekhter, P.; Palumbo, Félix Roberto Mario; Cohen Weinfeld, K.; Eizenberg, M.; X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks; American Institute of Physics; Applied Physics Letters; 105; 10; 8-2014; 1-5
dc.identifier.issn
0003-6951
dc.identifier.uri
http://hdl.handle.net/11336/35950
dc.description.abstract
In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al2O3/InGaAs and SiO2/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
American Institute of Physics
![Se ha confirmado la validez de este valor de autoridad por un usuario](/themes/CONICETDigital/images/authority_control/invisible.gif)
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by/2.5/ar/
dc.subject
Oxide-Semiconductor Interface
dc.subject
Reliability
dc.subject
Mos
dc.subject
X-Ray Photoelectron Spectroscopy
dc.subject
Dielectric Thin Films
dc.subject
Ozone
dc.subject
Iii-V Semiconductors
dc.subject
Interface Structure
dc.subject.classification
Astronomía
![Se ha confirmado la validez de este valor de autoridad por un usuario](/themes/CONICETDigital/images/authority_control/invisible.gif)
dc.subject.classification
Ciencias Físicas
![Se ha confirmado la validez de este valor de autoridad por un usuario](/themes/CONICETDigital/images/authority_control/invisible.gif)
dc.subject.classification
CIENCIAS NATURALES Y EXACTAS
![Se ha confirmado la validez de este valor de autoridad por un usuario](/themes/CONICETDigital/images/authority_control/invisible.gif)
dc.title
X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2018-02-06T20:06:32Z
dc.journal.volume
105
dc.journal.number
10
dc.journal.pagination
1-5
dc.journal.pais
Estados Unidos
![Se ha confirmado la validez de este valor de autoridad por un usuario](/themes/CONICETDigital/images/authority_control/invisible.gif)
dc.journal.ciudad
Nueva York
dc.description.fil
Fil: Shekhter, P.. Technion - Israel Institute of Technology; Israel
dc.description.fil
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
dc.description.fil
Fil: Cohen Weinfeld, K.. Technion - Israel Institute of Technology; Israel
dc.description.fil
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
dc.journal.title
Applied Physics Letters
![Se ha confirmado la validez de este valor de autoridad por un usuario](/themes/CONICETDigital/images/authority_control/invisible.gif)
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1063/1.4895627
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/abs/10.1063/1.4895627
Archivos asociados