Artículo
Fractional quantum Hall effect in a dilute magnetic semiconductor
Betthausen, C.; Giudici, Paula
; Iankilevitch, A.; Preis, C.; Kolkovsky, V.; Wiater, M.; Karczewski, G.; Piot, B. A.; Kunc, J.; Potemski, M.; Wojtowicz, T.; Weiss, D.
Fecha de publicación:
09/2014
Editorial:
American Physical Society
Revista:
Physical Review B: Condensed Matter and Materials Physics
ISSN:
1098-0121
e-ISSN:
2469-9969
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We report the observation of the fractional quantum Hall effect in the lowest Landau level of a two-dimensional electron system (2DES), residing in the diluted magnetic semiconductor
Cd1−xMnxTe. The presence of magnetic impurities results in a giant Zeeman splitting leading to an unusual ordering of composite fermion Landau levels. In experiment, this results in an unconventional opening and closing of fractional gaps around the filling factor ν=3/2 as a function of an in-plane magnetic field, i.e., of the Zeeman energy. By including the s-d exchange energy into the composite Landau level spectrum the opening and closing of the gap at filling factor 5/3 can be modeled quantitatively. The widely tunable spin-splitting in a diluted magnetic 2DES provides a means to manipulate fractional states.
Palabras clave:
Fqhe
,
Magnetic Materials
,
2d Electro Gases
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Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL
Articulos de SEDE CENTRAL
Citación
Betthausen, C.; Giudici, Paula; Iankilevitch, A.; Preis, C.; Kolkovsky, V.; et al.; Fractional quantum Hall effect in a dilute magnetic semiconductor; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 90; 11; 9-2014; 115302-115305
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