Artículo
Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations
Cedola, Ariel Pablo; Gioannini, Mariangela; Cappelluti, Federica; Cappelletti, Marcelo Ángel
; Peltzer y Blanca, Eitel Leopoldo
![Icon](/themes/CONICETDigital/images/conicet.png)
![Icon](/themes/CONICETDigital/images/conicet.png)
Fecha de publicación:
08/2014
Editorial:
Institute of Electrical and Electronics Engineers
Revista:
IEEE Latin America Transactions
ISSN:
1548-0992
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
This paper presents a theoretical study about quantum dot solar cells by means of numerical simulations, considering different doping levels in the intrinsic region of the cells, with the aim of evaluating the effect on the device's power conversion efficiency. Results of simulations performed over GaAs solar cells with InAs quantum dots, based on two different fabrication processes, are reported. The donor doping density in the intrinsic region was ranged from 1013 to 1017 cm-3. It is shown that, for a doping level of 7×1015 cm-3, the contribution of larger sized quantum dots to the photocurrent is increased by 50%, a very promising result in the search for new designs with higher efficiencies.
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Articulos de CTRO.CIENTIFICO TECNOL.CONICET - LA PLATA
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - LA PLATA
Citación
Cedola, Ariel Pablo; Cappelletti, Marcelo Ángel; Gioannini, Mariangela; Peltzer y Blanca, Eitel Leopoldo; Cappelluti, Federica; Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations; Institute of Electrical and Electronics Engineers; IEEE Latin America Transactions; 12; 5; 8-2014; 922-927
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