Artículo
Electric-field-induced magnetization reorientation in a (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with out-of-plane anisotropy
Fecha de publicación:
11/2014
Editorial:
American Physical Society
Revista:
Physical Review B: Condensed Matter and Materials Physics
ISSN:
1098-0121
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Combined electric- and magnetic-field control of magnetization orientation and reversal is studied using anomalous Hall effect in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer. Its anisotropy results from the electrically tunable competition between the in-plane and out-of-plane anisotropies of both layers. The magnetic hysteresis loop shape is sensitive to the bias electric field. In the loop reversible part, an electric-field variation is found to reorient reversibly the magnetization. In this case, the magnetization direction follows the easy anisotropy direction controlled by electric field. In contrast, in the hysteretic part, an almost complete nonreversible magnetization reversal is achieved. This is interpreted as resulting from the electric-field-induced enhancement of domain nucleation and domain-wall propagation.
Palabras clave:
Magnetic Switching
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Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Citación
Cormier, M.; Jeudy, V.; Niazi, T.; Lucot, D.; Granada, Mara; et al.; Electric-field-induced magnetization reorientation in a (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with out-of-plane anisotropy; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 90; 17; 11-2014; 1-8; 174418
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