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dc.contributor.author
Palumbo, Félix Roberto Mario
dc.contributor.author
Inbar, Moshe
dc.date.available
2018-01-09T19:44:29Z
dc.date.issued
2014-01
dc.identifier.citation
Inbar, Moshe; Palumbo, Félix Roberto Mario; Degradation characteristics of metal/Al2O3/n-InGaAs capacitors; American Institute of Physics; Journal of Applied Physics; 115; 1-2014; 1-8
dc.identifier.issn
0021-8979
dc.identifier.uri
http://hdl.handle.net/11336/32715
dc.description.abstract
Implementation of new materials in Metal-Oxide-Semiconductor stacks requires capabilities to predict long-time degradation as well as the impact of process changes on degradation processes. In this work, the degradation under constant voltage stress of metal gate/Al2O3/InGaAs stacks is studied for different pre-dielectric deposition treatments. The results show that the degradation, particularly under negative bias, is strongly affected by the oxide-semiconductor surface treatment of the samples. Two contributions (interface states and bulk traps) dominate depending on the stress conditions. Surface treatment with NH4OH shows a better quality of the interface in term of interface states; however, it contributes to generation of positive charge on the dielectric layer.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
American Institute of Physics
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by/2.5/ar/
dc.subject
Reliability
dc.subject
Ingaas
dc.subject
High-K
dc.subject
Breakdown
dc.subject.classification
Astronomía
dc.subject.classification
Ciencias Físicas
dc.subject.classification
CIENCIAS NATURALES Y EXACTAS
dc.title
Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2018-01-08T19:46:38Z
dc.journal.volume
115
dc.journal.pagination
1-8
dc.journal.pais
Estados Unidos
dc.journal.ciudad
Nueva York
dc.description.fil
Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
dc.description.fil
Fil: Inbar, Moshe. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
dc.journal.title
Journal of Applied Physics
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1063/1.4861033
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/full/10.1063/1.4861033
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