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dc.contributor.author
Ropero Vega, Jose Luis

dc.contributor.author
Meléndez, A. M.
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Pedraza Avella, Julio Andrés

dc.contributor.author
Candal, Roberto Jorge

dc.contributor.author
Niño Gómez, M. E.
dc.date.available
2017-12-27T20:07:43Z
dc.date.issued
2014-03
dc.identifier.citation
Niño Gómez, M. E.; Candal, Roberto Jorge; Pedraza Avella, Julio Andrés; Meléndez, A. M.; Ropero Vega, Jose Luis; Mixed oxide semiconductors based on bismuth for photoelectrochemical applications; Springer; Journal of Solid State Electrochemistry (print); 18; 7; 3-2014; 1963-1971
dc.identifier.issn
1432-8488
dc.identifier.uri
http://hdl.handle.net/11336/31744
dc.description.abstract
The structural and photoelectrochemical properties of mixed oxide semiconductor films of Bi-Nb-M-O (M = Al, Fe, Ga, In) were studied in order to explore their use as photoanodes in photoelectrochemical cells. These films were prepared on AISI/SAE 304 stainless steel plates by sol–gel dip-coating. The films were characterized by scanning electron microscopy—energy dispersive spectroscopy (SEM-EDS), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), and their photoelectrochemical properties were studied by open circuit potential (OCP) measurements, linear sweep voltammetry (LSV), and cyclic voltammetry (CV). SEM micrographs show homogeneous and rough films with agglomerates on the surface. EDS analyses show that the films are composed of Bi, Nb, and M, and the agglomerates are mainly composed of Bi. XRD analyses show a predominant crystalline phase of bismuth(III) oxide (Bi2O3) and a secondary phase composed of Bi-M mixed oxides. It is noteworthy that there was no identified niobium-based crystalline phase. XPS results reveal that the films are composed by Bi(III), Nb(V), and M(III). CV results show that the electrochemical behavior is attributed only to the semiconductor films which indicate a good coating of the stainless steel support. OCP measurements show that all the films have n-type semiconductor properties and exhibited photoresponse to the visible light irradiation. LSV results show that the application of a potential higher than +0.1 V enhances the photocurrent which can be attributed to an improved charge carrier separation. The results indicate that these materials can be used in photoelectrochemical cells.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Springer

dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Sol-Gel
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Dip-Coating
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Bismuth Oxide
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Photoelectrochemistry
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Otras Ciencias Químicas

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Ciencias Químicas

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CIENCIAS NATURALES Y EXACTAS

dc.title
Mixed oxide semiconductors based on bismuth for photoelectrochemical applications
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2017-12-27T15:22:55Z
dc.identifier.eissn
1433-0768
dc.journal.volume
18
dc.journal.number
7
dc.journal.pagination
1963-1971
dc.journal.pais
Alemania

dc.journal.ciudad
Berlin
dc.description.fil
Fil: Ropero Vega, Jose Luis. Universidad Industrial Santander; Colombia. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
dc.description.fil
Fil: Meléndez, A. M.. Universidad Industrial Santander; Colombia
dc.description.fil
Fil: Pedraza Avella, Julio Andrés. Universidad Industrial Santander; Colombia
dc.description.fil
Fil: Candal, Roberto Jorge. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Química, Física de los Materiales, Medioambiente y Energía. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Química, Física de los Materiales, Medioambiente y Energía; Argentina
dc.description.fil
Fil: Niño Gómez, M. E.. Universidad Industrial Santander; Colombia
dc.journal.title
Journal of Solid State Electrochemistry (print)

dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1007/s10008-014-2420-4
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://link.springer.com/article/10.1007%2Fs10008-014-2420-4
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