Artículo
Improvement in the spectral response at long wavelenghts of a-SiGe:H solar cells by exponential band gap design of the i-layer
Fecha de publicación:
08/2002
Editorial:
Elsevier Science
Revista:
Journal of Non-crystalline Solids
ISSN:
0022-3093
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. In this paper we compare its optical and electrical characteristics with the two more common profiles: the U- and V-shapes. As predicted by the simulations, the new profile combines the advantages of both profiles. Like the V-shape, the exponential shape reduces the amount of Ge in the i-layer, decreasing both the space charge defect density inside the i-layer and the recombination losses. It also improves the electric field. At the same time, the exponential shape generates the same current density as the U-shape.
Palabras clave:
Sige Solar Cells
,
Spectral Response
,
Device Design
,
Bangap Engineering
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Articulos(INTEC)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Citación
Jimenez Zambrano, R.J.; Rubinelli, Francisco Alberto; Rath, J.K.; Schropp, R.E.I.; Improvement in the spectral response at long wavelenghts of a-SiGe:H solar cells by exponential band gap design of the i-layer; Elsevier Science; Journal of Non-crystalline Solids; 299; 8-2002; 1131-1135
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