Artículo

Origin of the giant negative photoresistance of ZnO single crystals

Barzola Quiquia, Jose Luis; Esquinazi, Pablo; Villafuerte, Manuel JoseIcon ; Pérez, Silvia Inés; Pöppl, A.; Eisinger, K.
Fecha de publicación: 10/2010
Editorial: American Institute of Physics
Revista: Journal of Applied Physics
ISSN: 0021-8979
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

We have measured the temperature dependence (30 K ≤ T ≤ 300 K) of the electrical resistance of ZnO single crystals prepared by hydrothermal method in darkness and under the influence of light in the ultraviolet range. The resistance decreases several orders of magnitude at temperatures T<200 K after illumination. Electron paramagnetic resonance studies under illumination reveal that the excitation of Li acceptor impurities is the origin for the giant negative photoresistance effect. Permanent photoresistance effect is also observed, which remains many hours after leaving the crystal in darkness.
Palabras clave: Photoconductivity , Zinc oxide , Single crystal
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/278390
URL: https://pubs.aip.org/aip/jap/article-abstract/108/7/073530/348265/Origin-of-the-
DOI: http://dx.doi.org/10.1063/1.3486214
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Articulos(CCT - NOA SUR)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - NOA SUR
Citación
Barzola Quiquia, Jose Luis; Esquinazi, Pablo; Villafuerte, Manuel Jose; Pérez, Silvia Inés; Pöppl, A.; et al.; Origin of the giant negative photoresistance of ZnO single crystals; American Institute of Physics; Journal of Applied Physics; 108; 7; 10-2010; 1-8
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