Artículo
Partial preservation of chiral symmetry and colossal magnetoresistance in adatom-doped graphene
Fecha de publicación:
15/02/2014
Editorial:
American Physical Society
Revista:
Physical Review B: Condensed Matter and Materials Physics
ISSN:
1098-0121
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We analyze the electronic properties of adatom-doped graphene in the low-impurity-concentration regime. We focus on the Anderson localized regime and calculate the localization length ξ as a function of the electron doping and an external magnetic field. The impurity states hybridize with carbon's pz states and form a partially filled band close to the Dirac point. Near the impurity band center, the chiral symmetry of the system's effective Hamiltonian is partially preserved, which leads to a large enhancement of ξ. The sensitivity of transport properties, namely, Mott's variable range hopping scale T0, to an external magnetic field perpendicular to the graphene sheet leads to a colossal magnetoresistance effect, as observed in recent experiments.
Palabras clave:
Graphene
,
Disorder
,
Transport
,
Impurities
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Colecciones
Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Citación
Usaj, Gonzalo; Cornaglia, Pablo S.; Balseiro, Carlos Antonio; Partial preservation of chiral symmetry and colossal magnetoresistance in adatom-doped graphene; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 89; 8; 15-2-2014; 085405,1-5
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