Artículo
Modeling a-Si:H p-i-n solar cells with the defect pool model
Fecha de publicación:
06/2004
Editorial:
Elsevier Science
Revista:
Journal of Non-crystalline Solids
ISSN:
0022-3093
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Using self-consistent computer modeling we find that the experimental current–voltage (J–V) and the spectral response (SR) characteristic curves of a-Si:H p–i–n solar cells can be fitted by either assuming a uniform density of dangling bonds (DB) in each device layer (UDM) or by relying on the defect pool model (DPM). Fittings within the DPM were achieved using the algorithms proposed by Powell and Deane and Schumm. One Si–H bond mediating in the creation of dangling bonds in the first expressions proposed by Powell and Deane and Schumm are appropriate for modeling solar cells in the initial state. The applicability of the algorithm proposed by Schumm for a-Si:H in the stabilized state is also discussed in solar cells. Using DPM we have explored the optimum doping and band gap profile in the intrinsic layer leading us to the maximum efficiency of a-Si:H p–i–n cells.
Palabras clave:
Solar Cells
,
Defect Pool
,
Amorphous Silicon
,
J-V Curves
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Articulos(INTEC)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Citación
Klimovsky, E.; Rath, J. K.; Schropp, R. E. I.; Rubinelli, Francisco Alberto; Modeling a-Si:H p-i-n solar cells with the defect pool model; Elsevier Science; Journal of Non-crystalline Solids; 338-340; 6-2004; 686-689
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