Artículo
Computer-aided band gap engineering and experimental verification of amorphous silicon-germanium solar cells
Jiménez Zambrano, Raúl; Rubinelli, Francisco Alberto
; Arnoldbik, Wim; Rath, Jatindra K.; Schropp, Ruud
Fecha de publicación:
08/2004
Editorial:
Elsevier Science
Revista:
Solar Energy Materials And Solar Cells
ISSN:
0927-0248
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results.
Palabras clave:
Sige Solar Cells
,
Bangap Engineering
,
Modelling
,
Efficiency
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Articulos(INTEC)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Citación
Jiménez Zambrano, Raúl; Rubinelli, Francisco Alberto; Arnoldbik, Wim; Rath, Jatindra K.; Schropp, Ruud; Computer-aided band gap engineering and experimental verification of amorphous silicon-germanium solar cells; Elsevier Science; Solar Energy Materials And Solar Cells; 81; 1; 8-2004; 73-86
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