Artículo
h -BN in the making: The surface chemistry of borazine on Rh(111)
Freiberger, Eva Marie; Düll, Fabian; Bachmann, Phiona; Steinhauer, Johann; Williams, Federico José
; Steinruck, Hans Peter; Papp, Christian
; Steinruck, Hans Peter; Papp, Christian
Fecha de publicación:
04/2024
Editorial:
American Institute of Physics
Revista:
Journal of Chemical Physics
ISSN:
0021-9606
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Borazine is a well-established precursor molecule for the growth of hexagonal boron nitride (h-BN) via chemical vapor deposition on metal substrates. To understand the formation of the h-BN/Rh(111) moiré from borazine on a molecular level, we investigated the low-temperature adsorption and thermally induced on-surface reaction of borazine on Rh(111) in situ using synchrotron radiation-based high-resolution x-ray photoelectron spectroscopy (XPS), temperature-programmed XPS, and near-edge x-ray absorption fine structure measurements. We find that borazine adsorbs mainly as an intact molecule and have identified a flat-lying adsorption geometry. Borazine multilayers are observed to desorb below 200 K. Starting at about 300 K, dehydrogenation of the remaining borazine and borazine fragments takes place, and disordered boron nitride starts to grow. Above 600 K, the formation of the h-BN sets in. Finally, at 1100 K, the conversion to h-BN is complete. The h-BN formed by deposition and post-annealing was compared to the h-BN grown by an established procedure, proving the successful preparation of the desired two-dimensional material.
Palabras clave:
borazine
,
rh(111)
,
XPS
,
sincrotron
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Articulos(INQUIMAE)
Articulos de INST.D/QUIM FIS D/L MATERIALES MEDIOAMB Y ENERGIA
Articulos de INST.D/QUIM FIS D/L MATERIALES MEDIOAMB Y ENERGIA
Citación
Freiberger, Eva Marie; Düll, Fabian; Bachmann, Phiona; Steinhauer, Johann; Williams, Federico José; et al.; h -BN in the making: The surface chemistry of borazine on Rh(111); American Institute of Physics; Journal of Chemical Physics; 160; 15; 4-2024; 1-10
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