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dc.contributor.author
Schmidt, Javier Alejandro
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dc.contributor.author
Longeaud, C.
dc.date.available
2017-10-13T15:13:29Z
dc.date.issued
2005-12
dc.identifier.citation
Schmidt, Javier Alejandro; Longeaud, C.; Analysis of the steady-state photocarrier grating method for the determination of the density of states in semiconductors; American Physical Society; Physical Review B; 71; 12; 12-2005; 1-13; 125208
dc.identifier.issn
0163-1829
dc.identifier.uri
http://hdl.handle.net/11336/26560
dc.description.abstract
IIn this paper we present a complete theoretical analysis of the steady-state photocarrier grating (SSPG) method, starting from the generalized equations that describe charge transport and recombination under grating conditions. The analytical solution of these equations and the application of simplifying assumptions leads to a very simple formula relating the density of states sDOSd at the quasi-Fermi level for trapped electrons to the SSPG signal at large grating periods. By means of numerical calculations reproducing the experimental SSPG curves we test our method for DOS determination. We examine previous theoretical descriptions of the SSPG experiment, illustrating the case when measurements are performed at different illumination intensities. We propose a procedure to estimate the minority-carriers mobility-lifetime product from SSPG curves, introducing a correction to the commonly applied formula. We illustrate the usefulness of our technique for determining the DOS in the gap of intrinsic semiconductors, and we underline its limitations when applied to hydrogenated amorphous silicon. We propose an experimental procedure that improves the accuracy of the SSPG-DOS reconstruction. Finally, we test experimentally this new method by comparing the DOS obtained from SSPG and modulated photocurrent measurements performed on the same samples. The experimental DOS obtained from both methods are in very good agreement.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
American Physical Society
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dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Photoconductivity
dc.subject
Density of States
dc.subject
Semiconductors
dc.subject
Thin Films
dc.subject.classification
Otras Ciencias Físicas
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dc.subject.classification
Ciencias Físicas
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dc.subject.classification
CIENCIAS NATURALES Y EXACTAS
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dc.title
Analysis of the steady-state photocarrier grating method for the determination of the density of states in semiconductors
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2017-10-12T19:57:24Z
dc.journal.volume
71
dc.journal.number
12
dc.journal.pagination
1-13; 125208
dc.journal.pais
Estados Unidos
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dc.description.fil
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
dc.description.fil
Fil: Longeaud, C.. Universités Paris VI et XI; Francia
dc.journal.title
Physical Review B
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dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1103/PhysRevB.71.125208
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.71.125208
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