Artículo
A hybrid amplifier topology for low‐noise direct‐coupled front ends
Fecha de publicación:
02/2024
Editorial:
John Wiley & Sons Ltd
Revista:
International Journal Of Circuit Theory And Applications
ISSN:
0098-9886
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Hybrid amplifiers combine discrete transistors with operational amplifiers (OAs) achieving superior characteristics compared with commercially available OAs, while keeping simple structures and a reduced number of parts. A single-ended amplifier topology based on a junction field-effect transistor (JFET) is proposed as a means of achieving very low input noise levels, both in current and voltage. It is direct-coupled and allows to place a high-pass filter at its input to preserve input range, or at its output to optimize noise. The proposed topology results in a low input capacitance and low input-current noise, making it suitable for applications where multiple amplifiers are connected in parallel to achieve ultra-low noise levels. The amplifier's gain is set by a resistor ratio, being suitable for instrumentation front ends. The circuit analysis and design equations are provided to adapt it for different applications and, as an example, an amplifier with a gain of 40 dB and a bandwidth from DC to 1 MHz was designed, built, and tested. The dominant noise contribution of the amplifier was the JFET (a JFE2140 device), featuring an input noise voltage of , that is reduced to when two amplifiers are connected in parallel.
Palabras clave:
Hybrid amplifiers
,
Low-noise amplifiers
,
JFET input amplifiers
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Articulos(LEICI)
Articulos de INSTITUTO DE INVESTIGACIONES EN ELECTRONICA, CONTROL Y PROCESAMIENTO DE SEÑALES
Articulos de INSTITUTO DE INVESTIGACIONES EN ELECTRONICA, CONTROL Y PROCESAMIENTO DE SEÑALES
Citación
Spinelli, Enrique Mario; Haberman, Marcelo Alejandro; Guerrero, Federico Nicolás; A hybrid amplifier topology for low‐noise direct‐coupled front ends; John Wiley & Sons Ltd; International Journal Of Circuit Theory And Applications; 52; 9; 2-2024; 4783-4795
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