ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?

We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2? oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2?. The obtained negative values of the Curie?Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms.

Palabras clave: diluted magnetic semiconductor , Co-doped ZnO

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Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)

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URI: http://hdl.handle.net/11336/246997

URL: http://link.springer.com/article/10.1007/s10853-010-4710-2?null

DOI: http://dx.doi.org/10.1007/s10853-010-4710-2

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Articulos(CCT - NOA SUR)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - NOA SUR

Articulos(IFLP)
Articulos de INST.DE FISICA LA PLATA

Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL

Citación

Golmar, Federico; Villafuerte, Manuel Jose; Mudarra Navarro, Azucena Marisol; RodrÍguez Torres, Claudia Elena; Barzola Quiquia, J.; et al.; ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?; Springer; Journal of Materials Science; 45; 22; 6-2010; 6174-6178

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