Artículo
Austenite modification of AISI 316L SS by pulsed nitrogen ion beams generated in dense plasma focus discharges
Feugeas, Jorge Nestor
; Rico, Leonardo
; Nosei, L.; Gomez, Bernardo Jose Armando
; Bemporad, E.; Lesage, Jacky; Ferron, Julio
; Rico, Leonardo
; Nosei, L.; Gomez, Bernardo Jose Armando
; Bemporad, E.; Lesage, Jacky; Ferron, Julio
Fecha de publicación:
12/2010
Editorial:
Elsevier Science SA
Revista:
Surface and Coatings Technology
ISSN:
0257-8972
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We present the results of surface modification of AISI 316L stainless steelby surface irradiation with high energy, pulsed nitrogen ion beams generatedwith 0.8 kJ Dense Plasma Focus. The surface characterization was doneusing GAXRD, Auger electrons spectroscopy, TEM and optical microscopy.After the irradiation, we found a modification of a 1 μm thick surface layer,on which a gradual lattice expansion of the austenite with the number ofirradiation pulses, i.e. with the total nitrogen ion fluence, was observed.In addition, on the »40 nm close to the surface layer, a disordered latticestructure had been observed through TEM analysis. Those results canbe explained in terms of the extreme thermal effect induced on the surfacethrough the fast high energy release during the pulsed ion interaction withthe steel surface, followed by an also rapid cooling down process which limitsthe nitrogen diffusion to the bulk.
Palabras clave:
AUSTENITA
,
PLASMA
,
AUGER
,
NITRURATION
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Identificadores
Colecciones
Articulos(IFIR)
Articulos de INST.DE FISICA DE ROSARIO (I)
Articulos de INST.DE FISICA DE ROSARIO (I)
Articulos(INTEC)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Citación
Feugeas, Jorge Nestor; Rico, Leonardo; Nosei, L.; Gomez, Bernardo Jose Armando; Bemporad, E.; et al.; Austenite modification of AISI 316L SS by pulsed nitrogen ion beams generated in dense plasma focus discharges; Elsevier Science SA; Surface and Coatings Technology; 204; 8; 12-2010; 1193-1199
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