Weak localization effects in some metallic perovskites

Abstract

We report a systematic study of the low-temperature electrical resistivity of epitaxial nanometric SrRuO3 and LaNiO3 thin films. Weak localization effects were taken into account in order to explain the presence of minima in the ρ–T curves. This description can be rationalized by the fact that, at the given growth conditions, the mean free path was comparable to the Fermi wavelength of the carriers, so that effects arising from quantum interference of the electronic wavefunctions were expected. The results reported here are of special interest to understand the relevance of weak localization effects in oxides.