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dc.contributor.author
Pazos, Sebastian
dc.contributor.author
Zheng, Wenwen
dc.contributor.author
Zanotti, Tommaso
dc.contributor.author
Aguirre, Fernando
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Becker, Thales
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Shen, Yaqing
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Zhu, Kaichen
dc.contributor.author
Yuan, Yue
dc.contributor.author
Wirth, Gilson
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Puglisi, Francesco Maria
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Roldán, Juan Bautista
dc.contributor.author
Palumbo, Félix Roberto Mario
dc.contributor.author
Lanza, Mario
dc.date.available
2024-07-03T13:48:41Z
dc.date.issued
2023-07
dc.identifier.citation
Pazos, Sebastian; Zheng, Wenwen; Zanotti, Tommaso; Aguirre, Fernando; Becker, Thales; et al.; Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller; Royal Society of Chemistry; Nanoscale; 15; 5; 7-2023; 2171-2180
dc.identifier.issn
2040-3364
dc.identifier.uri
http://hdl.handle.net/11336/238922
dc.description.abstract
The development of the internet-of-things requires cheap, light, small and reliable true random number generator (TRNG) circuits to encrypt the data—generated by objects or humans—before transmitting them. However, all current solutions consume too much power and require a relatively large battery, hindering the integration of TRNG circuits on most objects. Here we fabricated a TRNG circuit by exploiting stable random telegraph noise (RTN) current signals produced by memristors made of two-dimensional (2D) multi-layered hexagonal boron nitride (h-BN) grown by chemical vapor deposition and coupled with inkjet-printed Ag electrodes. When biased at small constant voltages (≤70 mV), the Ag/h-BN/Ag memristors exhibit RTN signals with very low power consumption (∼5.25 nW) and a relatively high current on/off ratio (∼2) for long periods (>1 hour). We constructed TRNG circuits connecting an h-BN memristor to a small, light and cheap ommercial microcontroller, producing a highly-stochastic, high-throughput signal (up to 7.8 Mbit s−1) even if the RTN at the input gets interrupted for long times up to 20 s, and if the stochasticity of the RTN signal is reduced. Our study presents the first full hardware implementation of 2Dmaterial-based TRNGs, enabled by the unique stability and figures of merit of the RTN signals in h-BN based memristors.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Royal Society of Chemistry
dc.rights
info:eu-repo/semantics/restrictedAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
RRAM
dc.subject
RTN
dc.subject
dielectric
dc.subject.classification
Nano-materiales
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Nanotecnología
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INGENIERÍAS Y TECNOLOGÍAS
dc.title
Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2024-06-24T09:51:13Z
dc.identifier.eissn
2040-3372
dc.journal.volume
15
dc.journal.number
5
dc.journal.pagination
2171-2180
dc.journal.pais
Estados Unidos
dc.description.fil
Fil: Pazos, Sebastian. King Abdullah University of Science and Technology; Arabia Saudita. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
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Fil: Zheng, Wenwen. King Abdullah University of Science and Technology; Arabia Saudita
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Fil: Zanotti, Tommaso. Università di Modena e Reggio Emilia; Italia
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Fil: Aguirre, Fernando. Universitat Autònoma de Barcelona; España
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Fil: Becker, Thales. Universidade Federal do Rio Grande do Sul; Brasil
dc.description.fil
Fil: Shen, Yaqing. King Abdullah University of Science and Technology; Arabia Saudita
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Fil: Zhu, Kaichen. Universidad de Barcelona; España
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Fil: Yuan, Yue. Shanghai Institute Of Microsystem And Information Technology Chinese Academy Of Sciences; China
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Fil: Wirth, Gilson. Universidade Federal do Rio Grande do Sul; Brasil
dc.description.fil
Fil: Puglisi, Francesco Maria. Università di Modena e Reggio Emilia; Italia
dc.description.fil
Fil: Roldán, Juan Bautista. Universidad de Granada; España
dc.description.fil
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
dc.description.fil
Fil: Lanza, Mario. King Abdullah University of Science and Technology; Arabia Saudita
dc.journal.title
Nanoscale
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://xlink.rsc.org/?DOI=D2NR06222D
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1039/D2NR06222D
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