Artículo

Numerical analysis of si and gaas solar cells exposed to space radiation

Cappelletti, Marcelo ÁngelIcon ; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel LeopoldoIcon
Fecha de publicación: 02/2013
Editorial: Institute of Electrical and Electronics Engineers
Revista: IEEE Latin America Transactions
ISSN: 1548-0992
Idioma: Español
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.
Palabras clave: Device Modeling , Numerical Simulation , Proton Radiation Effects , Solar Cells
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/23532
DOI: http://dx.doi.org/10.1109/TLA.2013.6502815
URL: http://ieeexplore.ieee.org/document/6502815/
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Articulos(CCT - LA PLATA)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - LA PLATA
Citación
Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Numerical analysis of si and gaas solar cells exposed to space radiation; Institute of Electrical and Electronics Engineers; IEEE Latin America Transactions; 11; 1; 2-2013; 268-273
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