Artículo
Numerical analysis of si and gaas solar cells exposed to space radiation
Cappelletti, Marcelo Ángel
; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo
![Icon](/themes/CONICETDigital/images/conicet.png)
![Icon](/themes/CONICETDigital/images/conicet.png)
Fecha de publicación:
02/2013
Editorial:
Institute of Electrical and Electronics Engineers
Revista:
IEEE Latin America Transactions
ISSN:
1548-0992
Idioma:
Español
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.
Palabras clave:
Device Modeling
,
Numerical Simulation
,
Proton Radiation Effects
,
Solar Cells
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Identificadores
Colecciones
Articulos(CCT - LA PLATA)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - LA PLATA
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - LA PLATA
Citación
Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Numerical analysis of si and gaas solar cells exposed to space radiation; Institute of Electrical and Electronics Engineers; IEEE Latin America Transactions; 11; 1; 2-2013; 268-273
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