Artículo
Effects of induced strain on the Raman spectra of AlxGa1−xAs compounds
Prado, A.; Tosi, Leandro
; Gonzalez, M.; Salazar Alarcon, Leonardo
; Rozas, Guillermo
; Anguiano, S.; Perez Morelo, D. J.; Pastoriza, Hernan
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Fecha de publicación:
10/2022
Editorial:
Elsevier Science
Revista:
Physica B: Condensed Matter
ISSN:
0921-4526
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
In this work we study the nuances of composition determination of AlxGa1−xAs alloys by Raman spectroscopy. We mainly focus on understanding the effect of induced strain on the frequency of the optical phonons, a possible source of the dispersion in the calibration curves found in the literature. We conclude that while GaAs-like and AlAs-like Raman peaks may show a wide dispersion across samples of the same composition, aluminum concentration can still be accurately determined via Raman spectroscopy, provided that the difference between the GaAs-like and AlAs-like longitudinal optical modes is used, regardless of residual strain present.
Palabras clave:
ALGAAS ALLOYS
,
RAMAN SPECTROSCOPY
,
UNIAXIAL STRAIN
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Identificadores
Colecciones
Articulos (UE-INN - NODO BARILOCHE)
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO BARILOCHE
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO BARILOCHE
Citación
Prado, A.; Tosi, Leandro; Gonzalez, M.; Salazar Alarcon, Leonardo; Rozas, Guillermo; et al.; Effects of induced strain on the Raman spectra of AlxGa1−xAs compounds; Elsevier Science; Physica B: Condensed Matter; 643; 10-2022; 1-5
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