Mostrar el registro sencillo del ítem
dc.contributor.author
Longeaud, C.
dc.contributor.author
Schmidt, Javier Alejandro
dc.contributor.author
Koropecki, Roberto Roman
dc.contributor.author
Kleider, J. P.
dc.date.available
2017-08-01T14:05:29Z
dc.date.issued
2009-12
dc.identifier.citation
Longeaud, C.; Schmidt, Javier Alejandro; Koropecki, Roberto Roman; Kleider, J. P.; Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements; Natl Inst Optoelectronics; Journal Of Optoelectronics And Advanced Materials; 11; 9; 12-2009; 1064-1071
dc.identifier.issn
1454-4164
dc.identifier.uri
http://hdl.handle.net/11336/21692
dc.description.abstract
In this paper, after a short recall of the information that can be extracted from different experiments based on the photoconductivity properties of a semiconductor, we present experimental results obtained on a thin film of hydrogenated amorphous silicon in the as-deposited, light-soaked and annealed states. We show that, taking advantage of the apparent discrepancies between the results of dc photoconductivity and modulated photoconductivity, density of states distributions as well as some of their capture coefficients can be deduced. The evolution of these quantities with light-soaking and annealing is also shown. The experimental results are also illustrated by means of numerical simulations.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Natl Inst Optoelectronics
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Thin Films
dc.subject
Photoconductivity
dc.subject
Computer Simulation
dc.subject.classification
Física de los Materiales Condensados
dc.subject.classification
Ciencias Físicas
dc.subject.classification
CIENCIAS NATURALES Y EXACTAS
dc.title
Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2017-07-28T15:14:35Z
dc.journal.volume
11
dc.journal.number
9
dc.journal.pagination
1064-1071
dc.journal.pais
Rumania
dc.description.fil
Fil: Longeaud, C.. Universités Paris VI et XI; Francia
dc.description.fil
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
dc.description.fil
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
dc.description.fil
Fil: Kleider, J. P.. Universités Paris VI et XI; Francia
dc.journal.title
Journal Of Optoelectronics And Advanced Materials
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://joam.inoe.ro/download.php?idu=2028
Archivos asociados