Could Silicon Solar Sensors Survive a Carrington-Type Event?

The objective of the present work is to study the effects of the damage produced by a Carrington-type event on silicon devices. Solar sensors were selected as an example for their simplicity. The Centro Atomico Constituyentes (CAC) method was applied to define the irradiation conditions. The results showed the extension of effects for this type of event on displacement-sensitive devices and will allow future satellite missions to design strategies to minimize radiation damage for this type of device in future satellite missions.

Palabras clave: ARGENTINIAN SATELLITES MISSIONS , CARRINGTON EVENT , RADIATION DAMAGE , SILICON SUN SENSORS

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Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)

Identificadores

URI: http://hdl.handle.net/11336/216876

URL: https://ieeexplore.ieee.org/document/9775111

DOI: http://dx.doi.org/10.1109/TNS.2022.3175434

Colecciones

Articulos (UE-INN - NODO CONSTITUYENTES)
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO CONSTITUYENTES

Citación

Moreno, Analía Verónica; Diaz Salazar, Martha; Kondratiuk, Nadia Yamila; Ibarra, María Luján; Tamasi, Mariana Julia Luisa; et al.; Could Silicon Solar Sensors Survive a Carrington-Type Event?; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 69; 6; 6-2022; 1236-1241

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