Artículo
A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells
Fecha de publicación:
12/2006
Editorial:
Elsevier Science Sa
Revista:
Thin Solid Films
ISSN:
0040-6090
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Microcrystalline silicon solar cells with intrinsic layer thicknesses between 500 and 3000 nm deposited using the hot-wire CVD techniqueare investigated, combining experimental characterisation with computer simulations. Fitting of the solar cell characteristic curves shows thatthis material has a density of dangling bonds and drift mobility that are comparable to that of amorphous silicon, whereas its mobility bandgap is closer to the value of crystalline silicon. These fittings can be done assuming homogeneous electrical parameters in the intrinsic layers.A maximum in solar cell performance was seen for i-layer thickness of 3000 nm.
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Articulos(INTEC)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Citación
Strengers, J.; Rubinelli, Francisco Alberto; Rath, J. K.; Schropp, R. E. I.; A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells; Elsevier Science Sa; Thin Solid Films; 501; 1-2; 12-2006; 291-294
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