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dc.contributor.author
Dussan, A.
dc.contributor.author
Buitrago, Roman Horacio
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dc.contributor.author
Koropecki, Roberto Roman
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dc.date.available
2017-07-06T19:23:08Z
dc.date.issued
2008-11
dc.identifier.citation
Dussan, A.; Buitrago, Roman Horacio; Koropecki, Roberto Roman; Microcrystalline silicon thin films: A review of physical properties; Elsevier; Microelectronics Journal; 39; 11; 11-2008; 1292-1295
dc.identifier.issn
0026-2692
dc.identifier.uri
http://hdl.handle.net/11336/19788
dc.description.abstract
In this work we present a study of the optical, electrical, electronic and structural properties of Boron doped hydrogenated microcrystalline silicon thin films (mc-Si:H). The films were deposited in an RF plasma reactor using as reactive gas a mixture of silane and diborane, both highly diluted in hydrogen. The Boron concentration in the reactive gas was modified from 0 to 100 ppm. The addition of Boron to the silicon films not only moves the Fermi energy level to the center of the gap, but also induces changes in all the physical properties. The Boron effect on structural and morphological properties was studied by X-ray diffraction and atomic force microscopy (AFM); the rugosity and grain size increased with the Boron concentration. The absorption coefficient measured by the constant photocurrent method (CPM) at low photon energies also showed an increase, which can be explained and correlated with an increase in the density of state (DOS) in the gap, due to Boron’s bonding. At high temperatures (T>300K) the controlling transport mechanism is thermally activated; the curves conductivity log versus the inverse of temperature gives straight lines. The activation energy, measured from the valence band, decreases with Boron concentration, as expected, passing through a maximum, corresponding this point to the position of Fermi energy of an intrinsic film. At low temperatures (T<300K) the predominant transport mechanism was variable range hopping (VRH). The behavior of the charge hopping under different electrical fields was followed. Results showed that conductivity remained constant in a VRH regime only for a narrow range of electrical field.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Elsevier
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dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Microcrystalline Silicon
dc.subject
Optoelectronic Properties
dc.subject
Density of States
dc.subject.classification
Física de los Materiales Condensados
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dc.subject.classification
Ciencias Físicas
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dc.subject.classification
CIENCIAS NATURALES Y EXACTAS
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dc.title
Microcrystalline silicon thin films: A review of physical properties
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2017-06-29T13:36:27Z
dc.journal.volume
39
dc.journal.number
11
dc.journal.pagination
1292-1295
dc.journal.pais
Países Bajos
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dc.journal.ciudad
Amsterdam
dc.description.fil
Fil: Dussan, A.. Universidad Nacional de Colombia; Colombia
dc.description.fil
Fil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
dc.description.fil
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
dc.journal.title
Microelectronics Journal
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dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.mejo.2008.01.019
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0026269208000608?via%3Dihub
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