Artículo

C60-based hot-electron magnetic tunnel transistor

Gobbi, M.; Bedoya Pinto, A.; Golmar, FedericoIcon ; Llopis, R.; Casanova, F.; Hueso, L. E.
Fecha de publicación: 09/2012
Editorial: American Institute of Physics
Revista: Applied Physics Letters
ISSN: 0003-6951
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

A C 60-based magnetic tunnel transistor is presented. The device is based on the collection of spin-filtered hot-electrons at a metal/C 60 interface, and it allows an accurate measurement of the energy level alignment at such interface. A 89% change in the collected current under the application of a magnetic field demonstrates that these devices can be used as sensitive magnetic field sensors compatible with soft electronics.
Palabras clave: fullerenes , hot carriers , hot electron transistors , magnetic sensors , magnetic tunnelling , semiconductor materials , semiconductor-metal boundaries , tunnel transistors
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/190051
URL: https://aip.scitation.org/doi/10.1063/1.4751030
DOI: http://dx.doi.org/10.1063/1.4751030
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Citación
Gobbi, M.; Bedoya Pinto, A.; Golmar, Federico; Llopis, R.; Casanova, F.; et al.; C60-based hot-electron magnetic tunnel transistor; American Institute of Physics; Applied Physics Letters; 101; 10; 9-2012; 1-4
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