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dc.contributor.author
Palumbo, Félix Roberto Mario
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dc.contributor.author
Miranda, E.
dc.contributor.author
Ghibaudo, G.
dc.contributor.author
Jousseaume, V.
dc.date.available
2023-03-07T12:13:19Z
dc.date.issued
2012-01
dc.identifier.citation
Palumbo, Félix Roberto Mario; Miranda, E.; Ghibaudo, G.; Jousseaume, V.; Formation and characterization of filamentary current paths in HFO 2-based resistive switching structures; Institute of Electrical and Electronics Engineers; IEEE Electron Device Letters; 33; 7; 1-2012; 1057-1059
dc.identifier.issn
0741-3106
dc.identifier.uri
http://hdl.handle.net/11336/189786
dc.description.abstract
In this letter, the progressive nature of the forming process step in HfO 2-based resistive switching structures is investigated. Contrary to what happens with ramped or pulsed voltage stresses, current-driven degradation experiments shed light on the formation dynamics of the filamentary path across the oxide layer. The resulting voltage-current characteristics are interpreted in terms of electron transport through a mesoscopic constriction with adiabatic shape. The voltage decrease during the forming process is ascribed to a relaxation of the electron wavefunction confinement effect. The role of the compliance level on the leakage current magnitude is also discussed within this framework.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Institute of Electrical and Electronics Engineers
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dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
DIELECTRIC BREAKDOWN
dc.subject
RESISTIVE SWITCHING (RS)
dc.subject.classification
Nano-materiales
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dc.subject.classification
Nanotecnología
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dc.subject.classification
INGENIERÍAS Y TECNOLOGÍAS
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dc.title
Formation and characterization of filamentary current paths in HFO 2-based resistive switching structures
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2023-03-07T11:23:42Z
dc.journal.volume
33
dc.journal.number
7
dc.journal.pagination
1057-1059
dc.journal.pais
Estados Unidos
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dc.journal.ciudad
New York
dc.description.fil
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
dc.description.fil
Fil: Miranda, E.. Universitat Autònoma de Barcelona; España
dc.description.fil
Fil: Ghibaudo, G.. No especifíca;
dc.description.fil
Fil: Jousseaume, V.. No especifíca;
dc.journal.title
IEEE Electron Device Letters
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dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/6194991
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1109/LED.2012.2194689
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