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dc.contributor.author
Pongpaiboonkul, Suriyong  
dc.contributor.author
Daniels, Thitima M.  
dc.contributor.author
Hodak, Jose Hector  
dc.contributor.author
Wisitsoraat, Anurat  
dc.contributor.author
Hodak, Satreerat K.  
dc.date.available
2022-12-21T14:25:31Z  
dc.date.issued
2021-02  
dc.identifier.citation
Pongpaiboonkul, Suriyong; Daniels, Thitima M.; Hodak, Jose Hector; Wisitsoraat, Anurat; Hodak, Satreerat K.; Preferentially oriented Fe-doped CaCu3Ti4O12 films with high dielectric constant and low dielectric loss deposited on LaAlO3 and NdGaO3 substrates; Elsevier Science; Applied Surface Science; 540; 2-2021; 148373-148380  
dc.identifier.issn
0169-4332  
dc.identifier.uri
http://hdl.handle.net/11336/181978  
dc.description.abstract
The colossal dielectric constant of calcium copper titanate (CCTO) thin films is generally accompanied by high dielectric losses which limit its potential for electronic miniaturization. Strategies for reducing the dielectric loss while keeping large dielectric constants are needed for various electrical applications of CCTO. This work aims to reduce the loss by means of doping preferentially oriented CCTO films with Fe3+ ions. Highly oriented undoped and Fe-doped calcium copper titanate (Fe-doped CCTO) thin films were fabricated by synthesizing CCTO on LaAlO3(1 0 0) and NdGaO3(1 0 0) substrates via a sol-gel spin casting method. The films with different Fe-doping concentrations (0, 1.6 and 2.6 wt%) were structurally and chemically characterized via energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. X-Ray Diffraction (XRD) patterns confirmed that our doped CCTO films had a cubic perovskite structure with well-defined preferential orientations of (h00) and (hh0) on LAO and NGO substrates, respectively. Preferentially oriented films having room temperature dielectric constants on the order of 1000 in conjunction with values of loss tangent smaller than 0.012 in the frequency range of 50 Hz-2 MHz were achieved. Temperature dependence of the dielectric constant and loss tangent revealed that Fe-doping decreased the dielectric loss via the lowering of the electrical conduction through CCTO grains.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
Elsevier Science  
dc.rights
info:eu-repo/semantics/restrictedAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject
FE-DOPED CACU3TI4O12  
dc.subject
LOW DIELECTRIC LOSS  
dc.subject
PREFERENTIAL ORIENTATIONS  
dc.subject
SOL-GEL  
dc.subject.classification
Físico-Química, Ciencia de los Polímeros, Electroquímica  
dc.subject.classification
Ciencias Químicas  
dc.subject.classification
CIENCIAS NATURALES Y EXACTAS  
dc.title
Preferentially oriented Fe-doped CaCu3Ti4O12 films with high dielectric constant and low dielectric loss deposited on LaAlO3 and NdGaO3 substrates  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2022-10-03T18:50:26Z  
dc.journal.volume
540  
dc.journal.pagination
148373-148380  
dc.journal.pais
Países Bajos  
dc.journal.ciudad
Amsterdam  
dc.description.fil
Fil: Pongpaiboonkul, Suriyong. Chulalongkorn University; Tailandia  
dc.description.fil
Fil: Daniels, Thitima M.. National Electronics and Computer Technology Center; Tailandia  
dc.description.fil
Fil: Hodak, Jose Hector. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Química, Física de los Materiales, Medioambiente y Energía. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Química, Física de los Materiales, Medioambiente y Energía; Argentina  
dc.description.fil
Fil: Wisitsoraat, Anurat. National Electronics and Computer Technology Center; Tailandia  
dc.description.fil
Fil: Hodak, Satreerat K.. Chulalongkorn University; Tailandia  
dc.journal.title
Applied Surface Science  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0169433220331305  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.apsusc.2020.148373