Artículo

H2O2 as a strong catalyzer for the growth velocity of SILAR-deposited ZnO thin films

Roa Díaz, Simón AndreIcon ; Sandoval, Myrna; Suárez, Sergio Ariel
Fecha de publicación: 11/2021
Editorial: Elsevier Science
Revista: Chemical Physics Letters
ISSN: 0009-2614
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

In this work, we report the effects of different H2O2 concentrations on the growth velocity of ZnO thin films deposited by SILAR method·H2O2 effects on the films’ growth velocity were studied by Rutherford Backscattering Spectroscopy (RBS) technique. RBS results showed that thickness can be increased from 0 up to 290 ± 20 [nm] by increasing the H2O2 concentration from 0 to 30 %, evidencing the strong catalyzer effect of H2O2 on the films’ growth velocity. Our study provides relevant insights on the use of H2O2 as a key parameter for tuning the thickness of SILAR-deposited ZnO thin films.
Palabras clave: RUTHERFORD BACKSCATTERING SPECTROSCOPY , SILAR METHOD , ZNO THIN FILMS
 
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info:eu-repo/semantics/restrictedAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/181780
DOI: https://doi.org/10.1016/j.cplett.2021.139233
Colecciones
Articulos (UE-INN - NODO BARILOCHE)
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO BARILOCHE
Citación
Roa Díaz, Simón Andre; Sandoval, Myrna; Suárez, Sergio Ariel; H2O2 as a strong catalyzer for the growth velocity of SILAR-deposited ZnO thin films; Elsevier Science; Chemical Physics Letters; 787; 11-2021; 1-7
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