Artículo
Nanocrystalline superconducting γ-Mo2N ultra-thin films for single photon detectors
Fecha de publicación:
10/2021
Editorial:
Elsevier Science
Revista:
Materials Science and Engineering B: Solid State Materials for Advanced Technology
ISSN:
0921-5107
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We analyze the influence of the surface passivation produced by oxides on the superconducting properties of γ-Mo2N ultra-thin films. The superconducting critical temperature of thin films grown directly on Si (100) with those using a buffer and a capping layer of AlN are compared. The results show that the cover layer avoids the presence of surface oxides, maximizing the superconducting critical temperature for films with thicknesses of a few nanometers. We characterize the flux-flow instability measuring current-voltage curves in a 6.4 nm thick Mo2N film with a superconducting critical temperature of 6.4 K. The data is analyzed using the Larkin and Ovchinnikov model. Considering self-heating effects due to finite heat removal from the substrate, we determine a fast quasiparticle relaxation time ≈ 45 ps. This value is promising for its applications in single-photon detectors.
Palabras clave:
Mo2N
,
single photon detector
,
thin films
,
superconductors
Archivos asociados
Licencia
Identificadores
Colecciones
Articulos (UE-INN - NODO BARILOCHE)
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO BARILOCHE
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO BARILOCHE
Citación
Hofer, Juan Andres; Ginzburg, M.; Bengió, Silvina; Haberkorn, Nestor Fabian; Nanocrystalline superconducting γ-Mo2N ultra-thin films for single photon detectors; Elsevier Science; Materials Science and Engineering B: Solid State Materials for Advanced Technology; 275; 10-2021; 1154991-1154996
Compartir
Altmétricas