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dc.contributor.author
Roa Díaz, Simón Andre
dc.contributor.author
Sandoval, Myrna
dc.contributor.author
Sirena, Martin
dc.date.available
2022-12-16T19:02:43Z
dc.date.issued
2021-05
dc.identifier.citation
Roa Díaz, Simón Andre; Sandoval, Myrna; Sirena, Martin; Chemical bath deposition of high structural and morphological quality PbSe thin films with potential optoelectronic properties for infrared detection applications; Elsevier Science SA; Materials Chemistry and Physics; 264; 5-2021; 1-12
dc.identifier.issn
0254-0584
dc.identifier.uri
http://hdl.handle.net/11336/181618
dc.description.abstract
Lead selenide (PbSe) thin films deposited by aqueous-based chemical methods have recently reached considerable importance for the production of different low cost and good quality optoelectronic devices. Applications in infrared devices as well as in low cost photovoltaic technologies as efficient absorbent layers have been extensively studied. In this work, the synthesis of homogeneous, polycrystalline, low-roughness, electrically conductive and narrow band gap PbSe thin films by using Chemical Bath Deposition (CBD) on glass substrates is reported. The effects of using different NaOH concentrations on the films physical and chemical properties were studied. Structural analysis realized by X-Ray Diffraction (XRD) technique showed the polycrystalline nature of the films, particularly observing a preferred <100> texture. Atomic Force Microscopy (AFM) studies revealed a compact and homogeneous growth of the thin films. A well-defined microstructure and low roughness (varying between 5 and 35 [nm]) were generally observed. Scanning Electron Microscopy (SEM) imaging studies showed the good growth quality of the thin films, observing well-defined film-to-substrate interfaces. Film thickness values between 138 ± 9 and 277 ± 20 [nm] were estimated. Chemical composition analysis realized by Energy Dispersive X-Ray Spectroscopy (EDS) exposed the non-stoichiometric nature of the PbSe films. An atomic concentration predominance of Se with respect to Pb in all samples was observed, suggesting a possible p-type conductivity. Infrared spectrophotometry measurements indicated energy band gaps in the Mid-Infrared Range (MIR), estimating values from 0.326 up to 0.393 [eV]. The thin films generally presented high electrical conductivities with respect to the typical ranges for semiconductors, estimating values in the order of 101 [(Ω·cm)−1]. Results show that the low cost and simple synthesis CBD based procedures can be used to produce high structural and morphological quality PbSe thin films with attractive optoelectronic properties (narrow band gap and electrically conductive) for the potential development of devices in infrared detection industry.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Elsevier Science SA
dc.rights
info:eu-repo/semantics/restrictedAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
CHEMICAL BATH DEPOSITION
dc.subject
LEAD SELENIDE
dc.subject
THIN FILMS GROWTH
dc.subject.classification
Recubrimientos y Películas
dc.subject.classification
Ingeniería de los Materiales
dc.subject.classification
INGENIERÍAS Y TECNOLOGÍAS
dc.title
Chemical bath deposition of high structural and morphological quality PbSe thin films with potential optoelectronic properties for infrared detection applications
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2022-10-04T14:44:57Z
dc.journal.volume
264
dc.journal.pagination
1-12
dc.journal.pais
Países Bajos
dc.journal.ciudad
Amsterdam
dc.description.fil
Fil: Roa Díaz, Simón Andre. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
dc.description.fil
Fil: Sandoval, Myrna. Universidad de Concepción; Chile
dc.description.fil
Fil: Sirena, Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
dc.journal.title
Materials Chemistry and Physics
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/abs/pii/S0254058421002625
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.matchemphys.2021.124479
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