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dc.contributor.author
Roa Díaz, Simón Andre  
dc.contributor.author
Sandoval, Myrna  
dc.contributor.author
Sirena, Martin  
dc.date.available
2022-12-16T19:02:43Z  
dc.date.issued
2021-05  
dc.identifier.citation
Roa Díaz, Simón Andre; Sandoval, Myrna; Sirena, Martin; Chemical bath deposition of high structural and morphological quality PbSe thin films with potential optoelectronic properties for infrared detection applications; Elsevier Science SA; Materials Chemistry and Physics; 264; 5-2021; 1-12  
dc.identifier.issn
0254-0584  
dc.identifier.uri
http://hdl.handle.net/11336/181618  
dc.description.abstract
Lead selenide (PbSe) thin films deposited by aqueous-based chemical methods have recently reached considerable importance for the production of different low cost and good quality optoelectronic devices. Applications in infrared devices as well as in low cost photovoltaic technologies as efficient absorbent layers have been extensively studied. In this work, the synthesis of homogeneous, polycrystalline, low-roughness, electrically conductive and narrow band gap PbSe thin films by using Chemical Bath Deposition (CBD) on glass substrates is reported. The effects of using different NaOH concentrations on the films physical and chemical properties were studied. Structural analysis realized by X-Ray Diffraction (XRD) technique showed the polycrystalline nature of the films, particularly observing a preferred <100> texture. Atomic Force Microscopy (AFM) studies revealed a compact and homogeneous growth of the thin films. A well-defined microstructure and low roughness (varying between 5 and 35 [nm]) were generally observed. Scanning Electron Microscopy (SEM) imaging studies showed the good growth quality of the thin films, observing well-defined film-to-substrate interfaces. Film thickness values between 138 ± 9 and 277 ± 20 [nm] were estimated. Chemical composition analysis realized by Energy Dispersive X-Ray Spectroscopy (EDS) exposed the non-stoichiometric nature of the PbSe films. An atomic concentration predominance of Se with respect to Pb in all samples was observed, suggesting a possible p-type conductivity. Infrared spectrophotometry measurements indicated energy band gaps in the Mid-Infrared Range (MIR), estimating values from 0.326 up to 0.393 [eV]. The thin films generally presented high electrical conductivities with respect to the typical ranges for semiconductors, estimating values in the order of 101 [(Ω·cm)−1]. Results show that the low cost and simple synthesis CBD based procedures can be used to produce high structural and morphological quality PbSe thin films with attractive optoelectronic properties (narrow band gap and electrically conductive) for the potential development of devices in infrared detection industry.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
Elsevier Science SA  
dc.rights
info:eu-repo/semantics/restrictedAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject
CHEMICAL BATH DEPOSITION  
dc.subject
LEAD SELENIDE  
dc.subject
THIN FILMS GROWTH  
dc.subject.classification
Recubrimientos y Películas  
dc.subject.classification
Ingeniería de los Materiales  
dc.subject.classification
INGENIERÍAS Y TECNOLOGÍAS  
dc.title
Chemical bath deposition of high structural and morphological quality PbSe thin films with potential optoelectronic properties for infrared detection applications  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2022-10-04T14:44:57Z  
dc.journal.volume
264  
dc.journal.pagination
1-12  
dc.journal.pais
Países Bajos  
dc.journal.ciudad
Amsterdam  
dc.description.fil
Fil: Roa Díaz, Simón Andre. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina  
dc.description.fil
Fil: Sandoval, Myrna. Universidad de Concepción; Chile  
dc.description.fil
Fil: Sirena, Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina  
dc.journal.title
Materials Chemistry and Physics  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/abs/pii/S0254058421002625  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.matchemphys.2021.124479