Artículo
Phenomenological Model for the metal-insulator transition in two dimensions
Fecha de publicación:
12/2009
Editorial:
Soc Brasileira Fisica
Revista:
Brazilian Journal Of Physics
ISSN:
0103-9733
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
The resistivity measured in two-dimensional MOSFET geometry is modeled by considering that the resistivity is a function of the temperature and the areal density of charges (electrons or holes). The logistical differential equation is proposed for the behaviour of the resistivity as a function of temperature, so that the two phases are obtained in a natural manner. At low temperatures, the Drude model behaviour is assumed for the resistivity as a function of density. Two characteristics then follow in a natural manner: The existance of a characteristic temperature for resistivity as a function of temperature, and the symmetry relationship. If the magnetic field is incorporated into the Drude model, reasonable results are obtained for the qualititive behaviour of resistivity for weak fields.
Palabras clave:
Mos Structure
Archivos asociados
Licencia
Identificadores
Colecciones
Articulos(INTEC)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Citación
Weisz, Juan Francisco; Phenomenological Model for the metal-insulator transition in two dimensions; Soc Brasileira Fisica; Brazilian Journal Of Physics; 39; 4; 12-2009; 715-717
Compartir
Altmétricas