Crecimiento y caracterización de películas delgadas de tio2 y ti1- xfexo2

Abstract

Titanium dioxide (TiO2) and Fe-doped titanium dioxide (Ti1-xFexO2) thin films were grown on silicon substrates using the magnetron sputtering Rf (13.56 MHz) technique. The relevant growth parameters for the samples (pressure, power, gas mixture ratio, distance between target-substrate, among others) were found. The plasma deposition environment for the ternary films was characterized by optical emission spectroscopy in order to verify and identify the present species which were iron and titanium. The TiO2 films, deposited on silicon substrates [100], showed an amorphous phase while the ternary films showed low crystallinity. After annealing at 800 °C crystalline phases appeared, rutile in binary films and mixed in ternary films.