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dc.contributor.author
Torchia, Gustavo Adrian
dc.contributor.author
Alvira, Fernando Carlos
dc.date.available
2022-04-07T19:38:22Z
dc.date.issued
2020-12-23
dc.identifier.citation
Torchia, Gustavo Adrian; Alvira, Fernando Carlos; Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2; American Chemical Society; ChemRxiv; 23-12-2020; 1-11
dc.identifier.uri
http://hdl.handle.net/11336/154666
dc.description.abstract
We analyzed the ablation dynamics for Silicon atoms located in two different environments. Experiments were done with semiconductor (silicon wafer) and a dielectric material (fused silica). We point out some difference in plasma dynamics for Silicon in both environments. Those results can not be explained with current and accepted theoretical models, which asseverate that after the femtosecond laser pulse interact with the surface, the process evolve as metal regardless the kind of material under excitation. Electronic density and temperature were measured with temporal resolution on SiO2 and Si samples by using standard fs LIBS imaging spectroscopy. Extinction time of both plasmas is different depending on the kind of sample under irradiation. Lifetime for plasma obtained in dielectric sample is shorter than that of semiconductor. The main reason to explain this behavior is related to the deep defect induced in the dielectric (fused silica) gap by the femtosecond process; these centers act as sink for the free electron promoted by the laser interaction from the valence band to the plasma, so for dielectrics, shorter lifetime plasmas are obtained when femtosecond pulse irradiation is conducted.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
American Chemical Society
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc/2.5/ar/
dc.subject
SILICON
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FEMTO LIBS
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FUSED SILICA
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ULTRA SHORT ABLATION
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Óptica
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Ciencias Físicas
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CIENCIAS NATURALES Y EXACTAS
dc.title
Comparative study of plasmas obtained by Femtosecond Laser Pulses Ablation in Si and SiO2
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2021-09-06T17:21:40Z
dc.identifier.eissn
2573-2293
dc.journal.pagination
1-11
dc.journal.pais
Estados Unidos
dc.description.fil
Fil: Torchia, Gustavo Adrian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Centro de Investigaciones Ópticas. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Centro de Investigaciones Ópticas. Universidad Nacional de La Plata. Centro de Investigaciones Ópticas; Argentina
dc.description.fil
Fil: Alvira, Fernando Carlos. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto Multidisciplinario de Biología Celular. Grupo Vinculado al IMBICE - Grupo de Biología Estructural y Biotecnología - Universidad Nacional de Quilmes - GBEyB | Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Instituto Multidisciplinario de Biología Celular. Grupo Vinculado al IMBICE - Grupo de Biología Estructural y Biotecnología - Universidad Nacional de Quilmes - GBEyB | Universidad Nacional de La Plata. Instituto Multidisciplinario de Biología Celular. Grupo Vinculado al IMBICE - Grupo de Biología Estructural y Biotecnología - Universidad Nacional de Quilmes - GBEyB; Argentina. Universidad Nacional de Quilmes. Departamento de Ciencia y Tecnología; Argentina
dc.journal.title
ChemRxiv
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.26434/chemrxiv.13476039.v1
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://chemrxiv.org/engage/chemrxiv/article-details/60c753534c8919377bad42e0
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