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dc.contributor.author
Olivier, Aurélien  
dc.contributor.author
Aviles Felix, Luis Steven  
dc.contributor.author
Chavent, Antoine  
dc.contributor.author
Álvaro Gómez, Laura  
dc.contributor.author
Rubio Roy, Miguel  
dc.contributor.author
Auffret, Stéphane  
dc.contributor.author
Vila, Laurent  
dc.contributor.author
Dieny, Bernard  
dc.contributor.author
Sousa, Ricardo  
dc.contributor.author
Prejbeanu, Lucian  
dc.date.available
2021-11-11T04:42:26Z  
dc.date.issued
2020-10  
dc.identifier.citation
Olivier, Aurélien; Aviles Felix, Luis Steven; Chavent, Antoine; Álvaro Gómez, Laura; Rubio Roy, Miguel; et al.; Indium Tin Oxide optical access for magnetic tunnel junctions in hybrid spintronic-photonic circuits; IOP Publishing; Nanotechnology; 31; 42; 10-2020; 1-9  
dc.identifier.issn
0957-4484  
dc.identifier.uri
http://hdl.handle.net/11336/146639  
dc.description.abstract
The all-optical magnetization reversal of magnetic layers, by picosecond optical pulses, is of particular interest as it shows the potential for energy-efficient and fast magnetic tunnel junction (MTJ) elements. This approach requires memory elements that are optically and electronically accessible, for optical writing and electronic read-out. In this paper, we propose the integration of indium tin oxide (ITO) as a transparent conducting electrode for magnetic tunnel junctions in integrated spintronic-photonic circuits. To provide light with sufficient energy to the MTJ free layer and allow electrical read-out of the MTJ state, we successfully integrated indium tin oxide as a top transparent electrode. The study shows that ITO film deposition by physical vapor deposition with conditions such as high source power and low O2 flow achieves smooth and conductive thin films. Increase in grain size was associated with low resistivity. Deposition of 150 nm ITO at 300 W, O2 flow of 1 sccm and 8.10-3 mbar vacuum pressure results in 4.8 10-4 Ω.cm resistivity and up to 80% transmittance at 800 nm wavelength. The patterning of ITO using CH4/H2 chemistry in a reactive ion etch process was investigated showing almost vertical sidewalls for diameters down to 50 nm. The ITO based process flow was compared to a standard magnetic tunnel junctions fabrication process flow based on Ta hard mask. Electrical measurements validate that the proposed process based on ITO results in properties equivalent to the standard process. We also show electrical results of magnetic tunnel junctions having all-optical switching top electrode fabricated with ITO for optical access. The developed ITO process flow shows very promising initial results and provides a way to fabricate these new devices to integrate all-optical switching magnetic tunnel junctions with electronic and photonic elements.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
IOP Publishing  
dc.rights
info:eu-repo/semantics/restrictedAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject
ALL OPTICAL SWITCHING  
dc.subject
INDIUM TIN OXIDE (ITO)  
dc.subject
ITO PATTERNING  
dc.subject
MAGNETIC TUNNEL JUNCTION (MTJ)  
dc.subject
MRAM  
dc.subject
[PT/CO]/FECOB/MGO/FECOB  
dc.subject.classification
Física de los Materiales Condensados  
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Ciencias Físicas  
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CIENCIAS NATURALES Y EXACTAS  
dc.title
Indium Tin Oxide optical access for magnetic tunnel junctions in hybrid spintronic-photonic circuits  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2021-10-20T18:20:57Z  
dc.journal.volume
31  
dc.journal.number
42  
dc.journal.pagination
1-9  
dc.journal.pais
Reino Unido  
dc.journal.ciudad
Londres  
dc.description.fil
Fil: Olivier, Aurélien. Universite Grenoble Alpes; Francia  
dc.description.fil
Fil: Aviles Felix, Luis Steven. Universite Grenoble Alpes; Francia. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina  
dc.description.fil
Fil: Chavent, Antoine. Universite Grenoble Alpes; Francia  
dc.description.fil
Fil: Álvaro Gómez, Laura. Universite Grenoble Alpes; Francia. Madrid Institute for Advanced Studies in Nanoscience; España  
dc.description.fil
Fil: Rubio Roy, Miguel. Universite Grenoble Alpes; Francia  
dc.description.fil
Fil: Auffret, Stéphane. Universite Grenoble Alpes; Francia  
dc.description.fil
Fil: Vila, Laurent. Universite Grenoble Alpes; Francia  
dc.description.fil
Fil: Dieny, Bernard. Universite Grenoble Alpes; Francia  
dc.description.fil
Fil: Sousa, Ricardo. Universite Grenoble Alpes; Francia  
dc.description.fil
Fil: Prejbeanu, Lucian. Universite Grenoble Alpes; Francia  
dc.journal.title
Nanotechnology  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1088/1361-6528/ab9c56  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1088/1361-6528/ab9c56