Characterization of graphene grown by direct-liquid-injection chemical vapor deposition with cyclohexane precursor in N2 ambient

Abstract

We synthesize graphene films by direct-liquid-injection chemical vapor deposition (DLI-CVD) method with cyclohexane precursor (C6H12) in N2 ambient. This process offers a safer, and more economical route for large-scale graphene production in which hydrogen gas is not required. Graphene films are grown on Cu foil substrates at 890 to 980 °C for 10 min in the total pressure of 2 mbar. The flow rate of cyclohexane is varied between 0.2 and 0.5 g/min. The Raman results shows continuous monolayer graphene films at growth temperature of 950 °C and a flow rate of 0.5 g/min. Hall and field-effect measurements show mobilities in the range of 450–800 cm2 /V·s. The relatively low D peak intensity suggests that carrier mobility is likely limited by impurities introduced to the devices during transfer process and device fabrication.