Artículo
Adsorbate-induced roughening of Si(100) by interactions at steps
Fecha de publicación:
19/07/2010
Editorial:
American Physical Society
Revista:
Physical Review B
ISSN:
0163-1829
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Through a detailed study of Cl adsorption on Si(100) using scanning-tunneling microscopy, we identified sites at steps where adsorption leads to roughening and the formation of extended pits and regrowth structures. Using the equilibrium occupation probabilities obtained from experiment, we were able to identify first-nearest-neighbor interactions that destabilized the surface and, when included in Monte Carlo simulations, reproduced the observed pit and regrowth structures. These findings force a reevaluation of currently proposed mechanisms for roughening.
Palabras clave:
Roughening
,
Silicon
,
Steps
Archivos asociados
Licencia
Identificadores
Colecciones
Articulos(INTEMA)
Articulos de INST.DE INV.EN CIENCIA Y TECNOL.MATERIALES (I)
Articulos de INST.DE INV.EN CIENCIA Y TECNOL.MATERIALES (I)
Citación
Butera, R. E.; Mirabella, D. A.; Aldao, Celso Manuel; Weaver, J. H.; Adsorbate-induced roughening of Si(100) by interactions at steps; American Physical Society; Physical Review B; 82; 4; 19-7-2010; 45309-45309
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