Artículo
Ultralow Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application
Alcalde Bessia, Fabricio Pablo
; Flandre, Denis; André, Nicolás; Irazoqui, Julieta; Perez, Martín; Gomez Berisso, Mariano
; Lipovetzky, José
Fecha de publicación:
02/10/2019
Editorial:
Institute of Electrical and Electronics Engineers
Revista:
Ieee Transactions on Nuclear Science
ISSN:
0018-9499
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We evaluate the use of thick buried oxide (BOX) of fully depleted silicon-on-insulator (FD-SOI) transistors for total ionizing dose (TID) measurements in a radiotherapy application. The devices were fabricated by a custom process at Université Catholique de Leuven (UCL) that allows one to make accumulation mode pMOS transistors and inversion mode nMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray irradiation produced by an Elekta radiotherapy linear accelerator and compared the obtained dose sensitivity with other published works. Taking advantage of these devices, an ultralow power MOS ionizing dose sensor or MOS dosimeter with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA.
Archivos asociados
Licencia
Identificadores
Colecciones
Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Citación
Alcalde Bessia, Fabricio Pablo; Flandre, Denis; André, Nicolás; Irazoqui, Julieta; Perez, Martín; et al.; Ultralow Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 67; 10; 2-10-2019; 2217-2223
Compartir
Altmétricas