Artículo
Pressure dependence of the silicon carbide synthesis temperature
Fecha de publicación:
26/04/2019
Editorial:
American Institute of Physics
Revista:
Journal of Applied Physics
ISSN:
0021-8979
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
The starting temperature for SiC synthesis from elemental silicon, carbon black, and graphite powders was determined for pressures ranging from 0.8 to 11 GPa by in situ X-ray diffraction experiments. The synthesized SiC corresponds to the cubic 3C phase with the presence of stacking faults along the [111] direction. The lowest density of the stacking faults is achieved when black carbon is used instead of graphite. The minimum temperature to start the Si + C → SiC reaction slightly decreases when the pressure is increased up to 6 GPa and the reaction begins before silicon melts. For pressures higher than 8 GPa, the starting temperature increases, and the formation of SiC from the SiII phase requires the complete melting of silicon. Bulk modulus Bo= 236(14) GPa was obtained for the synthesized SiC phase.
Palabras clave:
SILICON CARBIDE
,
HIGH PRESSURE
,
X RAY DIFFRACTION
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Identificadores
Colecciones
Articulos(IFEG)
Articulos de INST.DE FISICA ENRIQUE GAVIOLA
Articulos de INST.DE FISICA ENRIQUE GAVIOLA
Citación
Limandri, Silvina Paola; Garbarino, G.; Sifre, D.; Mezouar, M.; Galván Josa, Víctor Martín; Pressure dependence of the silicon carbide synthesis temperature; American Institute of Physics; Journal of Applied Physics; 125; 16; 26-4-2019; 165902
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