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dc.contributor.author
Harvey, Taylor B.
dc.contributor.author
Bonafé, Franco Paúl
dc.contributor.author
Updegrave, Ty
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Voggu, Vikas Reddy
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Thomas, Cherrelle
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Kamarajugadda, Sirish C.
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Stolle, C. Jackson
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Pernik, Douglas
dc.contributor.author
Du, Jiang
dc.contributor.author
Korgel, Brian A.
dc.date.available
2021-01-29T16:23:50Z
dc.date.issued
2019-01
dc.identifier.citation
Harvey, Taylor B.; Bonafé, Franco Paúl; Updegrave, Ty; Voggu, Vikas Reddy; Thomas, Cherrelle; et al.; Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals; American Chemical Society; ACS Applied Energy Materials; 2; 1; 1-2019; 736-742
dc.identifier.uri
http://hdl.handle.net/11336/124226
dc.description.abstract
Crack-free films of Cu(In,Ga)Se2 (CIGS) nanocrystals were deposited with uniform thickness (>1 μm) on Mo-coated glass substrates using an ink-based, automated ultrasonic spray process, then selenized and incorporated into photovoltaic devices (PVs). The device performance depended strongly on the homogeneity of the selenized films. Cracks in the spray-deposited films resulted in uneven selenization rates and sintering by creating paths for rapid, uncontrollable selenium (Se) vapor penetration. To make crack-free films, the nanocrystals had to be completely coated with capping ligands in the ink. The selenization rate of crack-free films then depended on the thickness of the nanocrystal layer, the temperature, and duration of Se vapor exposure. Either inadequate or excessive Se exposure leads to poor device performance, generating films that were either partially sintered or exhibited significant accumulation of carbon and selenium. The deposition of uniform nanocrystal films is expected to be important for a variety of electronic and optoelectronic device applications.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
American Chemical Society
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
CIGS
dc.subject
COPPER INDIUM GALLIUM SELENIDE
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NANOCRYSTALS
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PHOTOVOLTAICS
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SELENIZATION
dc.subject.classification
Físico-Química, Ciencia de los Polímeros, Electroquímica
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Ciencias Químicas
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CIENCIAS NATURALES Y EXACTAS
dc.title
Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2020-11-17T18:38:38Z
dc.identifier.eissn
2574-0962
dc.journal.volume
2
dc.journal.number
1
dc.journal.pagination
736-742
dc.journal.pais
Estados Unidos
dc.description.fil
Fil: Harvey, Taylor B.. Texas A&M University; Estados Unidos
dc.description.fil
Fil: Bonafé, Franco Paúl. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
dc.description.fil
Fil: Updegrave, Ty. University of Texas at Austin; Estados Unidos
dc.description.fil
Fil: Voggu, Vikas Reddy. University of Texas at Austin; Estados Unidos
dc.description.fil
Fil: Thomas, Cherrelle. University of Texas at Austin; Estados Unidos
dc.description.fil
Fil: Kamarajugadda, Sirish C.. University of Texas at Austin; Estados Unidos
dc.description.fil
Fil: Stolle, C. Jackson. University of Texas at Austin; Estados Unidos
dc.description.fil
Fil: Pernik, Douglas. University of Texas at Austin; Estados Unidos
dc.description.fil
Fil: Du, Jiang. University of Texas at Austin; Estados Unidos
dc.description.fil
Fil: Korgel, Brian A.. University of Texas at Austin; Estados Unidos
dc.journal.title
ACS Applied Energy Materials
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://pubs.acs.org/doi/full/10.1021/acsaem.8b01800
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1021/acsaem.8b01800
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