Artículo
Microstructural control of the transport properties of β-FeSe films grown by sputtering
Ale Crivillero, María Victoria
; Amigo, M.; Haberkorn, Nestor Fabian
; Nieva, G.; Guimpel, Julio Juan
Fecha de publicación:
09/2019
Editorial:
American Institute of Physics
Revista:
Journal of Applied Physics
ISSN:
0021-8979
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We have investigated the correlation between structural and transport properties in sputtered β-FeSe films grown onto SrTiO3 (100). The growth parameters, such as substrate temperature and thickness, have been varied in order to explore different regimes. In the limit of textured thick films, we found promising features like an enhanced Tc ∼ 12K, a relatively high Hc2 and a low anisotropy. By performing magnetoresistance and Hall coefficient measurements, we investigate the influence of the disorder associated with the textured morphology on some features attributed to subtle details of the multi-band electronic structure of β-FeSe. Regarding the superconductor-insulator transition (SIT) induced by reducing the thickness, we found a non-trivial evolution of the structural properties and morphology associated with a strained initial growth and the coalescence of grains. Our results reveal the key effects on the macroscopic electronic behaviour played by the lattice distortion in thin insulating samples and by the grain morphology in thicker superconducting films.
Palabras clave:
thin films
,
iron based superconductors
,
sputtering
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Colecciones
Articulos (UE-INN - NODO BARILOCHE)
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO BARILOCHE
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO BARILOCHE
Citación
Ale Crivillero, María Victoria; Amigo, M.; Haberkorn, Nestor Fabian; Nieva, G.; Guimpel, Julio Juan; Microstructural control of the transport properties of β-FeSe films grown by sputtering; American Institute of Physics; Journal of Applied Physics; 126; 11; 9-2019; 115303-115312
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