Mostrar el registro sencillo del ítem
dc.contributor.author
Granell, Pablo Nicolás
dc.contributor.author
Wang, Guoliang
dc.contributor.author
Cañon Bermudez, Gilbert Santiago
dc.contributor.author
Kosub, Tobias
dc.contributor.author
Golmar, Federico
dc.contributor.author
Steren, Laura Beatriz
dc.contributor.author
Fassbender, Jürgen
dc.contributor.author
Makarov, Denys
dc.date.available
2021-01-26T15:01:20Z
dc.date.issued
2019-12
dc.identifier.citation
Granell, Pablo Nicolás; Wang, Guoliang; Cañon Bermudez, Gilbert Santiago; Kosub, Tobias; Golmar, Federico; et al.; Highly compliant planar Hall effect sensor with sub 200 nT sensitivity; Nature Publishing Group; NPJ Flexible Electronics; 3; 1; 12-2019; 3-7
dc.identifier.issn
2397-4621
dc.identifier.uri
http://hdl.handle.net/11336/123747
dc.description.abstract
Being a facet of flexible electronics, mechanically reshapeable magnetic field sensorics enable novel device ideas for soft robotics, interactive devices for virtual- and augmented reality and point of care diagnostics. These applications demand mechanically compliant yet robust sensor devices revealing high sensitivity to small magnetic fields. To push the detection limit of highly compliant and linear magnetic field sensors to be in the sub-µT range, we explore a new fundamental concept for magnetic field sensing, namely the planar Hall effect in magnetic thin films. With their remarkable bendability down to 1 mm, these compliant planar Hall effect sensors allow for an efficient detection of magnetic fields as small as 200 nT with a limit of detection of 20 nT. We demonstrate the application potential of these devices as a direction (angle) as well as proximity (distance) sensors of tiny magnetic fields emanating from magnetically functionalized objects. With their intrinsic linearity and simplicity of fabrication, these compliant planar Hall effect sensors have the potential to become a standard solution for low field applications of shapeable magnetoelectronics in point of care applications and on-skin interactive electronics.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Nature Publishing Group
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
flexible
dc.subject
magnetic sensors
dc.subject
Hall
dc.subject.classification
Nano-procesamiento
dc.subject.classification
Nanotecnología
dc.subject.classification
INGENIERÍAS Y TECNOLOGÍAS
dc.title
Highly compliant planar Hall effect sensor with sub 200 nT sensitivity
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2020-12-23T20:14:21Z
dc.journal.volume
3
dc.journal.number
1
dc.journal.pagination
3-7
dc.journal.pais
Reino Unido
dc.description.fil
Fil: Granell, Pablo Nicolás. Instituto Nacional de Tecnología Industrial; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
dc.description.fil
Fil: Wang, Guoliang. Institute of Ion Beam Physics and Materials Research; Alemania
dc.description.fil
Fil: Cañon Bermudez, Gilbert Santiago. Institute of Ion Beam Physics and Materials Research; Alemania
dc.description.fil
Fil: Kosub, Tobias. Institute of Ion Beam Physics and Materials Research; Alemania
dc.description.fil
Fil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
dc.description.fil
Fil: Steren, Laura Beatriz. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes.; Argentina
dc.description.fil
Fil: Fassbender, Jürgen. Institute of Ion Beam Physics and Materials Research; Alemania
dc.description.fil
Fil: Makarov, Denys. Institute of Ion Beam Physics and Materials Research; Alemania
dc.journal.title
NPJ Flexible Electronics
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1038/s41528-018-0046-9
Archivos asociados