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dc.contributor.author
Barbon, Claudio
dc.contributor.author
Bilovol, Vitaliy
dc.contributor.author
Di Liscia, Emiliano Javier
dc.contributor.author
Arcondo, Bibiana
dc.date.available
2020-12-23T13:55:49Z
dc.date.issued
2019-10
dc.identifier.citation
Barbon, Claudio; Bilovol, Vitaliy; Di Liscia, Emiliano Javier; Arcondo, Bibiana; Eutectic Sb7.4Te92.6 thin film for non-volatile phase-change memories; Emerald; Microelectronics International; 36; 4; 10-2019; 171-175
dc.identifier.issn
1356-5362
dc.identifier.uri
http://hdl.handle.net/11336/121095
dc.description.abstract
Purpose: The purpose of this paper is to investigate the structure and electrical properties of eutectic Sb7.4Te92.6 as made thin films to evaluate their potentiality for application to non-volatile phase-change memories. Design/methodology/approach: The films were prepared by the pulsed laser deposition technique. The films were characterized by using X-ray diffraction in grazing-incident geometry, differential scanning calorimetry, Raman spectroscopy and transversal current–voltage curves. Findings: The memory effect state, characteristic of a typical phase-change memory material, was observed. The temperature of crystallization was about 100ºC. Research limitations/implications: Further studies on endurance, scaling and SET/RESET operations are needed. Practical implications: One of the main characteristic values, the hold voltage and the threshold voltage values, were about 0.85 and 1.2 V, respectively, in a line with those of Ge2Sb2Te5, GeTe and Sb2Te being considered to date as the main compounds for phase-change memory devices. Originality/value: The conduction mechanism in the amorphous regime is highly agreed with the Poole–Frenkel effect in deep traps.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Emerald
dc.rights
info:eu-repo/semantics/restrictedAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
CHALCOGENIDES
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CURRENT-VOLTAGE CURVES
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PHASE-CHANGE MEMORIES
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THIN FILM
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Otras Ingeniería Eléctrica, Ingeniería Electrónica e Ingeniería de la Información
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Ingeniería Eléctrica, Ingeniería Electrónica e Ingeniería de la Información
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INGENIERÍAS Y TECNOLOGÍAS
dc.title
Eutectic Sb7.4Te92.6 thin film for non-volatile phase-change memories
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2020-12-09T15:25:24Z
dc.journal.volume
36
dc.journal.number
4
dc.journal.pagination
171-175
dc.journal.pais
Reino Unido
dc.description.fil
Fil: Barbon, Claudio. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
dc.description.fil
Fil: Bilovol, Vitaliy. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long". Universidad de Buenos Aires. Facultad de Ingeniería. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long"; Argentina
dc.description.fil
Fil: Di Liscia, Emiliano Javier. Comisión Nacional de Energía Atómica; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
dc.description.fil
Fil: Arcondo, Bibiana. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
dc.journal.title
Microelectronics International
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://www.emerald.com/insight/content/doi/10.1108/MI-03-2019-0016/full/html
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1108/MI-03-2019-0016
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