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dc.contributor.author
Yavari, M.
dc.contributor.author
Ebadi, Firouzeh
dc.contributor.author
Meloni, Simone
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Wang, Zishuai
dc.contributor.author
Yang, Terry Chien-Jen
dc.contributor.author
Sun, Shijing
dc.contributor.author
Schwartz, Heidi
dc.contributor.author
Wang, Zaiwei
dc.contributor.author
Niesen, Bjoern
dc.contributor.author
Durantini, Javier Esteban
dc.contributor.author
Rieder, Philipp
dc.contributor.author
Tvingstedt, Kristofer
dc.contributor.author
Buonassisi, Tonio
dc.contributor.author
Choy, Wallace C.H.
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Filippetti, Alessio
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Dittrich, Thomas
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Olthof, Selina
dc.contributor.author
Correa Baena, Juan Pablo
dc.contributor.author
Tress, Wolfgang
dc.date.available
2020-09-03T19:11:35Z
dc.date.issued
2019-03
dc.identifier.citation
Yavari, M.; Ebadi, Firouzeh; Meloni, Simone; Wang, Zishuai; Yang, Terry Chien-Jen; et al.; How far does the defect tolerance of lead-halide perovskites range? The example of Bi impurities introducing efficient recombination centers; Royal Society of Chemistry; Journal of Materials Chemistry A; 7; 41; 3-2019; 23838-23853
dc.identifier.issn
2050-7488
dc.identifier.uri
http://hdl.handle.net/11336/113162
dc.description.abstract
One of the key properties of lead-halide perovskites employed in solar cells is the defect tolerance of the materials, in particular regarding intrinsic point defects, which mainly form shallow traps. Considering that high luminescence yields and photovoltaic performance are obtained by simple solution processing from commercial chemicals, it is commonly anticipated that the defect tolerance-at least to a considerable degree-extends to grain boundaries and extrinsic defects, i.e. impurities, as well. However, the effect of impurities has hardly been investigated. Here, we intentionally introduce small quantities of bismuth (10 ppm to 2%) in solution to be incorporated in the perovskite films based on mixed cation mixed anion compositions. We observe that Bi impurities in the %-regime reduce charge carrier collection efficiency and, more importantly, that the open-circuit voltage decreases systematically with impurity concentration even in the ppm regime. This strong defect intolerance against Bi impurities comes along with reduced electroluminescence yields and charge carrier lifetimes obtained from transient photoluminescence experiments. Calculations based on molecular dynamics and density functional theory predict delocalized (≈0.16 eV) and localized deep (≈0.51 eV) trap states dependent on the structural arrangement of the surrounding atoms. Structural characterization supports the idea of Bi being present as a homogeneously spread point defect, which substitutes the Pb2+ by Bi3+ as seen from XPS and a reduction of the lattice parameter in XRD. Sensitive measurements of the photocurrent (by FTPS) and surface photovoltage (SPV) confirm the presence of tail states. Photoelectron spectroscopy measurements show evidence of a deep state. These results are consistent with the common idea of shallow traps being responsible for the reduced charge collection efficiency and the decreased fill factor, and deeper traps causing a substantial reduction of the open-circuit voltage. As Bi is only one potential impurity in the precursor salts used in perovskite solar cell fabrication, our findings open-up a research direction focusing on identifying and eliminating impurities that act as recombination centers-a topic that has so far not been fully considered in device optimization studies.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Royal Society of Chemistry
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
PEROVSKITE
dc.subject
IMPURITIES
dc.subject
BISMUTH
dc.subject
SOLAR CELLS
dc.subject.classification
Físico-Química, Ciencia de los Polímeros, Electroquímica
dc.subject.classification
Ciencias Químicas
dc.subject.classification
CIENCIAS NATURALES Y EXACTAS
dc.title
How far does the defect tolerance of lead-halide perovskites range? The example of Bi impurities introducing efficient recombination centers
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2020-08-20T20:28:55Z
dc.identifier.eissn
2050-7496
dc.journal.volume
7
dc.journal.number
41
dc.journal.pagination
23838-23853
dc.journal.pais
Reino Unido
dc.description.fil
Fil: Yavari, M.. École Polytechnique Fédérale de Lausanne; Suiza
dc.description.fil
Fil: Ebadi, Firouzeh. École Polytechnique Fédérale de Lausanne; Suiza
dc.description.fil
Fil: Meloni, Simone. Università di Roma; Italia
dc.description.fil
Fil: Wang, Zishuai. École Polytechnique Fédérale de Lausanne; Suiza
dc.description.fil
Fil: Yang, Terry Chien-Jen. École Polytechnique Fédérale de Lausanne; Suiza
dc.description.fil
Fil: Sun, Shijing. Massachusetts Institute Of Technology; Estados Unidos
dc.description.fil
Fil: Schwartz, Heidi. University Of Cologne; Alemania
dc.description.fil
Fil: Wang, Zaiwei. École Polytechnique Fédérale de Lausanne; Suiza
dc.description.fil
Fil: Niesen, Bjoern. École Polytechnique Fédérale de Lausanne; Suiza
dc.description.fil
Fil: Durantini, Javier Esteban. Universidad Nacional de Río Cuarto. Facultad de Ciencias Exactas Fisicoquímicas y Naturales. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados; Argentina
dc.description.fil
Fil: Rieder, Philipp. Julius Maximilian University Of Würzburg; Alemania
dc.description.fil
Fil: Tvingstedt, Kristofer. Julius Maximilian University Of Würzburg; Alemania
dc.description.fil
Fil: Buonassisi, Tonio. Massachusetts Institute Of Technology; Estados Unidos
dc.description.fil
Fil: Choy, Wallace C.H.. The University Of Hong Kong; Hong Kong
dc.description.fil
Fil: Filippetti, Alessio. Università Di Cagliari; Italia
dc.description.fil
Fil: Dittrich, Thomas. Helmholtz Center Berlin For Materials And Energy; Alemania
dc.description.fil
Fil: Olthof, Selina. University Of Cologne; Alemania
dc.description.fil
Fil: Correa Baena, Juan Pablo. Massachusetts Institute Of Technology; Estados Unidos
dc.description.fil
Fil: Tress, Wolfgang. École Polytechnique Fédérale de Lausanne; Suiza
dc.journal.title
Journal of Materials Chemistry A
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://pubs.rsc.org/en/Content/ArticleLanding/2019/TA/C9TA01744E
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1039/C9TA01744E
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