Artículo
Non-steady state transport of charge carriers. An approach based on invariant embedding method
Figueroa, Carlos Miguel; Straube, Benjamin
; Villafuerte, Manuel Jose
; Bridoux, German
; Ferreyra, J.; Vega, Nadia Celeste
; Heluani, S. P.
Fecha de publicación:
01/2020
Editorial:
American Institute of Physics
Revista:
Journal of Applied Physics
ISSN:
0021-8979
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
In this work, we report on a model that describes the microscopic electrical transport as a transmission problem using the invariant embedding technique. Analytical expressions for the transport coefficients under non-steady-state conditions are derived allowing us to calculate carrier concentration and time-dependent conductivity. Employing measurable magnitudes, our theoretical results allow us to determine defect concentrations, carrier generation rates, cross sections of recombination, and capture by traps. This model can be employed to study the conduction processes of semiconductors and test their band and defect structure. In particular, time-dependent photoconductivity measurements of a ZnO microwire have been well fitted using our model indicating a relevant role of intrinsic point defects in this material.
Palabras clave:
CONDUCTIVITY
,
PHOTOCONDUCTIVITY
,
CAPTURE
,
TRAPS
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Identificadores
Colecciones
Articulos (INFINOA)
Articulos de INSTITUTO DE FISICA DEL NOROESTE ARGENTINO
Articulos de INSTITUTO DE FISICA DEL NOROESTE ARGENTINO
Citación
Figueroa, Carlos Miguel; Straube, Benjamin; Villafuerte, Manuel Jose; Bridoux, German; Ferreyra, J.; et al.; Non-steady state transport of charge carriers. An approach based on invariant embedding method; American Institute of Physics; Journal of Applied Physics; 127; 4; 1-2020; 45703-45711
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