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dc.contributor.author
Schipani, Federico  
dc.contributor.author
Aldao, Celso Manuel  
dc.contributor.author
Ponce, Miguel Adolfo  
dc.date.available
2017-01-03T15:19:06Z  
dc.date.issued
2012-08-09  
dc.identifier.citation
Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo; Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films; American Institute of Physics; AIP Advances; 2; 9-8-2012; 2158-3226  
dc.identifier.issn
2158-3226  
dc.identifier.uri
http://hdl.handle.net/11336/10741  
dc.description.abstract
The oxygen adsorption effects on the Schottky barriers height measurements for thick films gas sensors prepared with undoped nanometric SnO2 particles were studied. From electrical measurements, the characteristics of the intergranular potential barriers developed at intergrains were deduced. It is shown that the determination of effective activation energies from conduction vs. 1/temperature curves is not generally a correct manner to estimate barrier heights. This is due to gas adsorption/desorption during the heating and cooling processes, the assumption of emission over the barrier as the dominant conduction mechanism, and the possible oxygen diffusion into or out of the grains.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
American Institute of Physics  
dc.rights
info:eu-repo/semantics/openAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject
Semiconductor Films  
dc.subject
Schottky Barriers  
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Gas Sensors  
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Tunneling  
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Activation Energies  
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Atmospheric Temperature  
dc.subject.classification
Física de los Materiales Condensados  
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Ciencias Físicas  
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CIENCIAS NATURALES Y EXACTAS  
dc.title
Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2017-01-02T18:31:10Z  
dc.journal.volume
2  
dc.journal.pagination
2158-3226  
dc.journal.pais
Estados Unidos  
dc.journal.ciudad
New York  
dc.description.fil
Fil: Schipani, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina  
dc.description.fil
Fil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina  
dc.description.fil
Fil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina  
dc.journal.title
AIP Advances  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1063/1.4746417  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4746417  

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