Franz-Keldysh effect in epitaxial ZnO thin films

Photoconductance spectroscopy has been studied in epitaxial ZnO thin films with different thicknesses that range between 136 and 21 nm. We report a systematic decrease in photoconductivity and a red shift in band edge photoconductance spectra when the thickness is reduced. For thinner films, it is found that the effective energy gap value diminishes. By time dependent photoconductivity measurements, we found an enhanced contribution of the slow relaxation times for thicker films. These effects are interpreted in terms of a band-bending contribution where the Franz-Keldysh effect and the polarization of ZnO play a major role in thinner films.

Palabras clave: SEMICONDUCTOR , PHOTOCONDUCTIVITY , PIEZOELECTRICITY , FILMS

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Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)

Identificadores

URI: http://hdl.handle.net/11336/101799

URL: http://aip.scitation.org/doi/10.1063/1.5010942

DOI: https://doi.org/10.1063/1.5010942

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Articulos (INFINOA)
Articulos de INSTITUTO DE FISICA DEL NOROESTE ARGENTINO

Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE

Citación

Bridoux, German; Villafuerte, Manuel Jose; Ferreyra, Jorge Mario; Guimpel, Julio Juan; Nieva, Gladys Leonor; et al.; Franz-Keldysh effect in epitaxial ZnO thin films; American Institute of Physics; Applied Physics Letters; 112; 092101; 2-2018; 1-6

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