Modeling a-Si:H p-i-n solar cells with the defect pool model

Abstract

Using self-consistent computer modeling we find that the experimental current–voltage (J–V) and the spectral response (SR) characteristic curves of a-Si:H p–i–n solar cells can be fitted by either assuming a uniform density of dangling bonds (DB) in each device layer (UDM) or by relying on the defect pool model (DPM). Fittings within the DPM were achieved using the algorithms proposed by Powell and Deane and Schumm. One Si–H bond mediating in the creation of dangling bonds in the first expressions proposed by Powell and Deane and Schumm are appropriate for modeling solar cells in the initial state. The applicability of the algorithm proposed by Schumm for a-Si:H in the stabilized state is also discussed in solar cells. Using DPM we have explored the optimum doping and band gap profile in the intrinsic layer leading us to the maximum efficiency of a-Si:H p–i–n cells.