Artículo
Resistive switching effect on Al2O3/InGaAs stacks
Fecha de publicación:
09/2013
Editorial:
Elsevier Science
Revista:
Microelectronic Engineering
ISSN:
0167-9317
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
The resistive switching (RS) pheno menon is currently attracting a lot of attention due to its potential Applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channels
Palabras clave:
Resistive Switching
,
High-K Dielectrics
,
Oxide Breakdown
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Citación
Palumbo, Félix Roberto Mario; Shekhter, P.; Krylov, I.; Ritter, D.; Eizenberg, M.; Resistive switching effect on Al2O3/InGaAs stacks; Elsevier Science; Microelectronic Engineering; 109; 9-2013; 83-86
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