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dc.contributor.author
Gilabert, Ulises Eduardo
dc.contributor.author
Moyano, Edgardo A.
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Scarpettini, Alberto Franco
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Trigubo, Alicia Beatriz
dc.date.available
2020-11-06T18:28:37Z
dc.date.issued
2010-04
dc.identifier.citation
Gilabert, Ulises Eduardo; Moyano, Edgardo A.; Scarpettini, Alberto Franco; Trigubo, Alicia Beatriz; Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations; Elsevier Science; Journal of Crystal Growth; 312; 9; 4-2010; 1481-1485
dc.identifier.issn
0022-0248
dc.identifier.uri
http://hdl.handle.net/11336/117830
dc.description.abstract
Hg1-xCdxTe (MCT) epilayers were grown on (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0) CdZnTe and CdTeSe substrates by isothermal vapor phase epitaxy (ISOVPE). The growth kinetics of the epilayers were studied by a non-linear diffusive convective model for the ISOVPE MCT growth, which was assessed in a previous paper . The non-linear diffusion–convection problem, which describes ISOVPE MCT film growth, was numerically solved by means of discrete mathematics. As the theoretical and experimental composition profiles were remarkably different in accordance with the epilayers grown over pure CdTe substrates, in the model a finite rate in the surface reaction rate constant that enabled a good fit was assumed. The numerical value of the surface reaction rate constant was similar for all the studied substrates and crystalline orientations, hence the results enabled us to determine that the deposition rate has a mixed control for the experimental conditions of this work. This isotropic characteristic of the ISOVPE technique for pure and alloyed CdTe substrates is remarkable, quite different from other MCT growth techniques as MBE or MOCVD.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Elsevier Science
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
GROWTH MODELS
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VAPOR PHASE EPITAXY
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CADMIUM COMPOUNDS
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SEMICONDUCTING II-VI MATERIALS
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Otras Ingeniería de los Materiales
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Ingeniería de los Materiales
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INGENIERÍAS Y TECNOLOGÍAS
dc.title
Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2020-10-22T18:19:16Z
dc.journal.volume
312
dc.journal.number
9
dc.journal.pagination
1481-1485
dc.journal.pais
Países Bajos
dc.journal.ciudad
Amsterdam
dc.description.fil
Fil: Gilabert, Ulises Eduardo. Secretaría de Industria y Minería. Servicio Geológico Minero Argentino; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
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Fil: Moyano, Edgardo A.. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes; Argentina
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Fil: Scarpettini, Alberto Franco. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Universidad Tecnológica Nacional. Facultad Regional Delta; Argentina
dc.description.fil
Fil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas para la Defensa; Argentina
dc.journal.title
Journal of Crystal Growth
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0022024810000412
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/https://doi.org/10.1016/j.jcrysgro.2010.01.027
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