Mostrar el registro sencillo del ítem
dc.contributor.author
de Greef, Marcelo Gastón
dc.contributor.author
Rubinelli, Francisco Alberto
dc.date.available
2016-12-26T13:43:37Z
dc.date.issued
2015-01
dc.identifier.citation
de Greef, Marcelo Gastón; Rubinelli, Francisco Alberto; Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used; Wiley Vch Verlag; Physica Status Solidi B-basic Research; 252; 1; 1-2015; 170-180
dc.identifier.issn
0370-1972
dc.identifier.uri
http://hdl.handle.net/11336/10048
dc.description.abstract
The performance of a-Si:H devices is highly sensitive to the density of gap states: tail states are distributed in two exponentials and defect states are generated by dangling bonds (DB). The density of DB in a-Si:H can be evaluated with the defect pool model (DPM). Charge trapping and recombination of electron–hole pairs through tail states are described by the Shockley–Read–Hall (SRH) formalism while defect states behave as amphoteric. Equations derived with the SRH formalism can be simplified with the Simmons–Taylor’s approximation (STA), especially with the “0K” approximation (0KSTA). Amphoteric-like defect states were approximated by donor- and acceptor-like decoupled states (DSA). The accuracy of STA was tested in a-Si:H based devices when the density of DB is evaluated with the DPM for different illumination conditions, voltages, temperatures, and some key electrical parameters. Our code was modified to include both the STA and the DSA. Our results indicate that the STA is very accurate under illuminated conditions. Under dark conditions, the STA is acceptable for forward voltages but overestimates the dark current at reverse voltages. The 0KSTA can be used under illuminated conditions for any applied voltage and under dark conditions for forward voltages.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Wiley Vch Verlag
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Amorphous Silicon Devices
dc.subject
Solar Cells
dc.subject
Optical Detectors
dc.subject
Defect Pool Model
dc.subject.classification
Ingeniería Eléctrica y Electrónica
dc.subject.classification
Ingeniería Eléctrica, Ingeniería Electrónica e Ingeniería de la Información
dc.subject.classification
INGENIERÍAS Y TECNOLOGÍAS
dc.title
Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2016-12-16T14:24:57Z
dc.journal.volume
252
dc.journal.number
1
dc.journal.pagination
170-180
dc.journal.pais
Alemania
dc.journal.ciudad
Weinheim
dc.description.fil
Fil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina
dc.description.fil
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina
dc.journal.title
Physica Status Solidi B-basic Research
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://dx.doi.org/10.1002/pssb.201451065
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pssb.201451065/abstract
Archivos asociados